TLP291
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110
˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
Current Transfer Ratio
Rank GB
Isolation Voltage
Operation temperature
UL recognized
cUL approved
SEMKO approved:
: 80 V (min)
: 50% (min)
: 100% (min)
: 3750 Vrms (min)
: -55 to 110
˚C
: UL1577, File No. E67349
: CSA Component Acceptance Service No.5A,
File No. 67349
EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
BSI approved
: BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
1
2
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Unit: mm
Pin Configuration
TLP291
4
3
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance:
Clearance:
Insulation thickness:
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
Start of commercial production
2012/02
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2014-09-22
TLP291
Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C)
Classification
(Note1)
Blank
Rank Y
Rank GR
TLP291
Rank GB
Rank YH
Rank GRL
Rank GRH
Rank BLL
Current Transfer Ratio (%)
(I
C
/ I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
Max
50
50
100
100
75
100
150
200
400
150
300
400
150
200
300
400
TYPE
Marking of Classification
Blank, YE, Y+, GR, GB, G, G+,B
YE
GR
GB
Y+
G
G+
B
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP291 (GB,E
For safety standard certification, however, specify the part number alone.
(e.g.)TLP291 (GB,E: TLP291
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2014-09-22
TLP291
Absolute Maximum Ratings
(Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward current
Input forward current derating (Ta≥90°C)
Input forward current (pulsed )
LED
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Collector-emitter voltage
DETECTOR
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation derating(Ta≥25°C)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating(Ta≥25°C)
Isolation voltage
(Ta
≥
90°C)
SYMBOL
I
F
∆I
F
/∆Ta
I
FP
V
R
P
D
∆P
D
/∆Ta
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/∆Ta
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/∆Ta
BV
S
(Note3)
(Note 2)
NOTE
RATING
50
-1.5
1
5
100
-3.0
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260 (10s)
200
-2.0
3750
UNIT
mA
mA /°C
A
V
mW
mW/°C
°C
V
V
mA
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width
≤
100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward voltage
LED
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
DETECTOR
Emitter-collector breakdown voltage
Dark current
Collector-emitter capacitance
SYMBOL
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
TEST CONDITION
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
MIN
1.1
-
-
80
7
-
-
-
TYP.
1.25
-
30
-
-
0.01
2
10
MAX
1.4
5
-
-
-
0.08
50
-
UNIT
V
μA
pF
V
V
μA
μA
pF
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2014-09-22
TLP291
Coupled Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Current transfer ratio
SYMBOL
I
C
/ I
F
TEST CONDITION
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
OFF-state collector current
I
C (off)
V
F
= 0.7 V, V
CE
= 48 V
MIN
50
100
-
30
-
-
-
-
TYP.
-
-
60
-
-
0.2
-
-
MAX
400
400
-
-
0.3
-
0.3
10
μA
V
UNIT
%
Saturated current transfer ratio
I
C
/ I
F (sat)
%
Isolation Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Total capacitance (input to output)
Isolation resistance
SYMBOL
C
S
R
S
TEST CONDITION
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.≤60%
AC , 1 minute
Isolation voltage
BV
S
AC , 1 second, in OIL
DC , 1 minute, in OIL
MIN
-
1×10
12
TYP.
0.8
10
14
MAX
-
-
-
-
-
UNIT
pF
Ω
Vrms
Vdc
3750
-
-
-
10000
10000
Switching Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
SYMBOL
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
TEST CONDITION
MIN
-
-
-
-
-
-
-
TYP.
4
7
7
7
2
30
60
MAX
-
-
-
-
-
-
-
μs
μs
UNIT
(Fig.1) Switching Time Test Circuit
t
on
t
off
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2014-09-22
TLP291
I F - Ta
100
160
P C - Ta
(mW)
140
120
100
80
60
40
20
0
-20
0
20
40
60
80
100
120
I F (mA)
80
Input forward current
60
40
20
(Note) This curve shows
the maximum limit to the
input forward current.
0
20
40
60
80
100
120
Collector power dissipation
P
C
(Note) This curve shows the
maximum limit to the collector
power dissipation.
0
-20
Ambient temperature
Ta
(˚C)
Ambient temperature
Ta
(˚C)
IFP-DR
IF-VF
3000
Pules width
≤100μs
Ta=25˚C
100
(mA)
I
F
Input forward current (pulsed)
I
FP
(mA)
1000
500
300
10
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
100
50
30
Input forward current
1
(Note) This curve shows the
maximum limit to the input
forward current (pulsed).
10
-3
10
-2
10
-1
10
0
10
0.1
0.6
0.8
1
1.2
1.4
1.6
V
F
1.8
(V)
2
Duty cycle ratio
D
R
Input forward voltage
∆
V F /
∆
Ta - I F
-3.2
-2.8
1000
IFP - VFP
(mA)
I
FP
Input forward current derating
ΔV
F
/ΔTa (mV/°C)
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1
1
10
100
Input forward current (pulsed)
100
10
Pulse width
≤10μs
Repeative frequency=100Hz
Ta=25°C
1
0.6
1
1.4
1.8
2.2
2.6
3
3.4
Input forward current
I
F
(mA)
Input forward voltage (pulsed)
V
FP
(V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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2014-09-22
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