TLP620,TLP620−2,TLP620−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP620, TLP620−2, TLP620−4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP620,
−2
and
−4
consists of a photo−transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
DIP.
•
•
Collector−emitter voltage: 55V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
TOSHIBA
Weight: 0.26 g (typ.)
11−5B2
Unit in mm
Pin Configurations
(top view)
TLP620
1
4
1
2
3
TLP620-2
8
1
2
3
TLP620-4
16
2
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
3
7
6
15
14
TOSHIBA
4
5
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6, 8 : COLLECTOR
4
5
13
12
11
11−10C4
Weight: 0.54 g (typ.)
6
7
8
10
9
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: ANODE, CATHODE
: CATHODE, ANODE
: EMITTER
: COLLECTOR
TOSHIBA
Weight: 1.1 g (typ.)
11−20A3
1
2007-10-01
TLP620,TLP620−2,TLP620−4
Made In Japan
UL recognized
BSI approved
E67349
7426, 7427
*1
*2
Made In Thailand
E152349
7426, 7427
*1
*2
•
•
*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
Isolation voltage: 5000V
rms
(min.)
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no.40009302
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When an EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”.
•
Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Forward current
Forward current derating
LED
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (1 circuit) (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta
≥
25°C, 1 circuit)
Isolation voltage
Symbol
I
F (RMS)
ΔI
F
/ °C
I
FP
P
D
ΔP
D
/ °C
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sold
P
T
ΔP
T
/ °C
BV
S
250
−2.5
150
−1.5
125
−55~125
−55~100
260 (10s)
150
−1.5
100
−1.0
125
55
7
50
100
−1.0
TLP620
60
−0.7
(Ta
≥
39°C)
TLP620−2
TLP620−4
50
−0.5
(Ta
≥
25°C)
Unit
mA
mA / °C
A
70
−0.7
mW
mW / °C
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
1 (100μs pulse, 100pps)
5000 (AC, 1 min., RH
≤
60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
2007-10-01
TLP620,TLP620−2,TLP620−4
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F (RMS)
IC
T
opr
Min.
―
―
―
−25
Typ.
5
16
1
―
Max.
24
20
10
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Forward current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
V
F
I
F
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= ±10mA
V
F
= ±0.7V
V = 0, f = 1MHz
I
C
= 0.5mA
I
E
= 0.1mA
V
CE
= 24V
V
CE
= 24V, Ta = 85°C
V
CE
= 0, f = 1MHz
Min.
1.0
―
―
55
7
―
―
―
Typ.
1.15
2.5
60
―
―
10
2
10
Max.
1.3
20
―
―
―
100
50
―
Unit
V
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= ±5mA, V
CE
= 5V
Rank GB
IF = ±1mA, V
CE
= 0.4V
Rank GB
I
C
= 2.4mA, I
F
= ±8mA
Collector−emitter saturation
voltage
Off−state collector current
CTR symmetry
V
CE (sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
V
F
= ± 0.7V, V
CE
= 24V
I
C
(I
F
=
−5mA)
/ I
C
(I
F
= +5mA)
MIn.
50
100
―
30
―
―
―
―
0.33
Typ.
―
―
60
―
―
0.2
―
1
1
Max.
600
600
―
―
0.4
―
0.4
10
3
μA
―
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
%
I
C (off)
I
C (ratio)
3
2007-10-01
TLP620,TLP620−2,TLP620−4
TLP620
100
I
F
– Ta
100
TLP620-2
TLP620-4
I
F
– Ta
Allowable forward current
I
F
(RMS) (mA)
60
Allowable forward current
I
F
(RMS) (mA)
60
100
120
80
80
60
40
40
20
20
0
−20
0
20
40
80
0
−20
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
TLP620
240
P
C
– Ta
120
TLP620-2
TLP620-4
P
C
– Ta
Allowable collector power
dissipation P
C
(mW)
160
Allowable collector power
dissipation P
C
(mW)
0
20
40
60
80
100
120
200
100
80
120
60
80
40
40
20
0
−20
0
−20
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
TLP620
3000
I
FP
– D
R
Pulse width≦100μs
Ta = 25°C
3000
TLP620-2
TLP620-4
I
FP
– D
R
Pulse width≦100μs
Ta = 25°C
Allowable pulse forward current
I
FP
(mA)
500
300
Allowable pulse forward current
I
FP
(mA)
−
10
3
−
10
2
−
10
1
1000
1000
500
300
100
50
30
100
50
30
10
3
3
3
3
10
0
10
3
−
10
3
3
−
10
2
3
−
10
1
3
10
0
Duty cycle ratio
D
R
Duty cycle ratio
D
R
5
2007-10-01
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Embedded System
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