e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1860-Rev. C, 13-Aug-12
Document Number: 65935
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ412EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 10 A, V
GS
= 0
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 6
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 10 A
V
GS
= 0 V
V
DS
= 20 V, f = 1 MHz
-
-
-
-
-
-
0.36
-
-
-
-
-
-
4950
630
270
80
13.1
12.3
0.72
45
150
50
55
-
0.8
5950
760
330
120
-
-
1.08
55
180
60
70
128
1.1
A
V
ns
nC
pF
g
fs
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 10.3 A
I
D
= 10.3 A, T
J
= 125 °C
I
D
= 10.3 A, T
J
= 175 °C
I
D
= 8.7 A
40
1.5
-
-
-
-
30
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0035
0.0053
0.0065
0.0042
85
-
2.5
± 100
1
50
150
-
0.0041
0.0070
0.0085
0.0052
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 16 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1860-Rev. C, 13-Aug-12
Document Number: 65935
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ412EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 4 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
56
70
Vishay Siliconix
42
42
28
28
T
C
= 25 °C
14
V
GS
= 3 V
14
T
C
= 125 °C
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
T
C
= - 55 °C
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Output Characteristics
200
0.015
Transfer Characteristics
g
fs
- Transconductance (S)
T
C
= - 55 °C
120
T
C
= 25 °C
80
T
C
= 125 °C
40
R
DS(on)
- On-Resistance (Ω)
160
0.012
0.009
0.006
V
GS
= 4.5 V
0.003
V
GS
= 10 V
0
0
12
24
36
I
D
- Drain Current (A)
48
60
0.000
0
14
28
42
I
D
- Drain Current (A)
56
70
Transconductance
7000
6000
C
iss
C - Capacitance (pF)
5000
4000
3000
2000
C
oss
1000
0
0
C
rss
10
20
30
40
0
0
10
10
On-Resistance vs. Drain Current
l
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
6
V
DS
= 20 V
4
2
20
V
DS
- Drain-to-Source Voltage (V)
30
40
50
60
70
Q
g
- Total
Gate
Charge (nC)
80
90
Capacitance
Gate Charge
S12-1860-Rev. C, 13-Aug-12
Document Number: 65935
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ412EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 15 A
1.7
100
Vishay Siliconix
V
GS
= 10 V
I
S
-
Source
Current (A)
10
1.4
V
GS
= 4.5 V
1.1
1
T
J
= 150 °C
T
J
= 25 °C
0.1
0.8
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
T
J
- Junction Temperature (°C)
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.05
0.5
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.04
V
GS(th)
Variance (V)
0.1
0.03
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
- 1.1
0.02
0.01
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
0
- 1.5
- 50
- 25
0
V
GS
-
Gate-to-Source
Voltage (V)
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
50
I
D
= 1 mA
48
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
46
44
42
40
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. C, 13-Aug-12
Document Number: 65935
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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