SB3H90, SB3H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capabilitmy
• High frequency operation
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
3.0 A
90 V, 100 V
100 A
0.65 V
20 μA
175 °C
DO-201AD
Single
For use in middle voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 90 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz
Critical rate of rise of reverse voltage
Storage temperature range
Maximum operating junction temperature
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
STG
T
J
SB3H90
90
90
90
3.0
100
1.0
10 000
- 55 to + 175
175
SB3H100
100
100
100
UNIT
V
V
V
A
A
A
V/μs
°C
°C
Revision: 13-Aug-13
Document Number: 88720
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SB3H90, SB3H100
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 3.0 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F
I
R
(1)
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum reverse current
at rated V
R
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
SB3H90
0.80
0.65
(2)
SB3H100
UNIT
V
μA
mA
20
4.0
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
SYMBOL
R
JA
R
JL
(1)
(1)
SB3H90
50
20
SB3H100
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SB3H100-E3/54
SB3H100-E3/73
UNIT WEIGHT (g)
1.09
1.09
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
4.0
100
Peak Forward
Surge
Current (A)
Average Forward Current (A)
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
3.0
T
J
= T
J
Max.
8.3 ms
Single
Half
Sine-Wave
80
60
2.0
40
1.0
20
0
0
25
50
75
100
125
150
175
10
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Aug-13
Document Number: 88720
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SB3H90, SB3H100
www.vishay.com
Vishay General Semiconductor
1000
100
Instantaneous Forward Current (A)
T
J
= 175 °C
10
T
J
= 150 °C
1
T
J
= 125 °C
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
T
J
= 100 °C
100
0.1
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
100
T
J
= 150 °C
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
10
10
T
J
= 100 °C
1
1
0.1
T
J
= 25 °C
0.01
20
40
60
80
100
0.1
0
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 13-Aug-13
Document Number: 88720
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
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