VS-MUR2020CT-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 10 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC
®
-JESD 47
Anode
3
3L
TO-220AB
Anode
1
2
Common
cathode
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Circuit configuration
3L TO-220AB
2 x 10 A
200 V
0.85 V
19 ns
175 °C
Common cathode
VS-MUR2020CT-M3 is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 145 °C
Rated V
R
, T
C
= 145 °C
TEST CONDITIONS
MAX.
200
10
20
100
20
-65 to +175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 μA
I
F
= 8 A, T
J
= 125 °C
I
F
= 16 A
I
F
= 16 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
55
8.0
MAX.
-
0.85
1.15
1.05
15
250
-
-
μA
pF
nH
V
UNITS
Revision: 02-Aug-17
Document Number: 96201
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MUR2020CT-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 10 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
21
35
1.9
4.8
25
78
MAX.
35
25
-
-
-
-
-
-
A
nC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
t
rr
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style 3L TO-220AB
per leg
total
device
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and
greased
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
-
0.5
2.0
0.07
-
MAX.
175
2.5
1.25
50
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
MUR2020CT
100
100
T
J
= 175 °C
I
R
- Reverse Current (µA)
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
1
1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.01
T
J
= 25 °C
0.1
0
0.4
0.8
1.2
1.6
2.0
0.001
0
50
100
150
200
250
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Aug-17
Document Number: 96201
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MUR2020CT-M3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
.
1
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
15
Allowable Case Temperature (°C)
170
Average Power Loss (W)
12
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
160
DC
9
150
Square wave (D = 0.50)
Rated V
R
applied
6
140
See note (1)
130
0
3
6
9
12
15
3
DC
0
0
3
6
9
12
15
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 02-Aug-17
Document Number: 96201
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MUR2020CT-M3
www.vishay.com
50
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
250
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
Vishay Semiconductors
40
200
Q
rr
(nC)
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
1000
t
rr
(ns)
30
150
20
100
10
50
0
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 02-Aug-17
Document Number: 96201
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MUR2020CT-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MUR
1
1
2
3
4
5
-
-
-
-
-
20
3
20
4
CT
5
-M3
6
2
Vishay
Semiconductors
product
Ultrafast MUR
series
Current rating (20 = 20 A)
Voltage rating (20 = 200 V)
CT = center tap (dual)
6
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MUR2020CT-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?96154
www.vishay.com/doc?95028
www.vishay.com/doc?95272
Revision: 02-Aug-17
Document Number: 96201
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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