DTA123JE-TL datasheet, PDF - EEWORLD Datasheet

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DTA123JE-TL: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3, 3 PIN; CategoryThe transistor; File Size1MB，11 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTA123JE-TL Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3, 3 PIN

DTA123JE-TL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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DTA123J series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Datasheet

Outline

Parameter

C(MAX.)

Value

-50V

-100mA

2.2kΩ

47kΩ

VMT3

EMT3F

DTA123JM

(SC-105AA)

EMT3

DTA123JEB

(SC-89)

UMT3F

Features

1) Built-In Biasing Resistors

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) Only the on/off conditions need to be set

for operation, making the circuit design easy.

4) Complementary NPN Types: DTC123J series

DTA123JE

SOT-416(SC-75A)

UMT3

DTA123JUB

(SC-85)

SMT3

DTA123JUA

SOT-323(SC-70)

DTA123JKA

SOT-346(SC-59)

Application

INVERTER, INTERFACE, DRIVER

Inner circuit

DTA123JM/ DTA123JEB/ DTA123JUB

DTA123JE/ DTA123JUA/ DTA123JKA

Packaging specifications

Part No.

DTA123JM

DTA123JEB

DTA123JE

DTA123JUB

DTA123JUA

DTA123JKA

Package

VMT3

EMT3F

EMT3

UMT3F

UMT3

SMT3

Package

size

1212

1616

2021

2928

Taping

code

T2L

T106

T146

1/10

Reel size Tape width

(mm)

180

Basic

ordering

unit.(pcs)

8000

3000

Marking

E32

132

E32

www.rohm.com

20150311 - Rev.002

DTA123JE-TL Related Products

	DTA123JE-TL	DTA123JUA-T106	DTA123JKA-T146	DTA123JM-T2L	DTA123JUB-TL	DTA123JEB-TL
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3F, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3F, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT IN BIAS RESISTOR RATIO 21	BUILT-IN BIAS RESISTOR RATIO IS 21
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	80	80	80	80
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-F3	R-PDSO-F3	R-PDSO-G3
JESD-609 code	e1	e1	e1	e2	e1	e1
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.15 W	0.2 W	0.2 W	0.15 W	0.2 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Copper (Sn/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING	GULL WING	GULL WING	FLAT	FLAT	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Base Number Matches	1	1	1	1	-	-

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