EGF1T
Vishay Semiconductors
Surface Mount Glass Passivated Ultrafast Rectifier
®
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
E
AS
T
j
max.
1.0 A
1300 V
20 A
75 ns
15 mJ
150 °C
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
DO-214BA (GF1)
Features
•
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
Avalanche surge energy capability
Meets environmental standard MIL-S-19500
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
Maximum Ratings
Device Marking Code
Maximum RMS voltage
Maximum DC blocking
T
A
= 25 °C unless otherwise specified
Parameter
N
ew
For use in high voltage rectification of photoflash
application
Pr
od
uc
t
Mechanical Data
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
T
J
,T
STG
EGF1T
ET
1300
910
1300
1.0
20
15
- 55 to + 150
Case:
DO-214BA, molded plastic over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per J-
STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Unit
V
V
V
A
A
mJ
°C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
A
= 25 °C, I
AS
= 1A,
L = 30 mH
Operating junction and storage temperature range
Document Number 88904
07-Jul-05
www.vishay.com
1
EGF1T
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous
Maximum DC reverse current
Typical reverse recovery time
Typical junction capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Test condition
at 1.0 A, T
j
= 25 °C
at V
RM (1)
T
j
= 25 °C
T
j
= 125 °C
Symbol
V
F
I
R
t
rr
C
J
EGF1T
3.0
5.0
50
75
8.0
Unit
V
µA
ns
pF
at I
F
= 0.5 A, I
R
=1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.95 x 0.95" (24 x 24 mm) copper pad areas
Symbol
R
θJA
R
θJL
EGF1T
50
20
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
1.5
25
Average Forward Current (A)
1.0
Forward Surge Current ( A )
20
15
10
0.5
5
0.0
25
50
75
100
125
150
175
0
1
10
Number
of Cycles
100
TI - Lead T
emperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Forward Surge Current
www.vishay.com
2
Document Number 88904
07-Jul-05
EGF1T
Vishay Semiconductors
100
100
Instantaneous Forward Current ( A )
Tj=150°C
Tj=125°C
1
Junction C
apacitance ( pF )
Tj=25°C
2.5
3
3.5
4
4.5
5
5.5
6
10
10
0.1
0.01
0
0.5
1
1.5
2
1
0.1
Instantaneous Forward
V
oltage (
V
)
1
10
100
Reverse
V
oltage (
V
)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance Per Leg
100
100
Tj=150°C
10
Instantaneous Reverse Leakage
Tj=125°C
1
Current (
uA
)
Transient Thermal Impedance ( °C/W )
50
60
70
80
90
100
10
0.1
Tj=25°C
0.01
0.001
10
20
30
40
1
0.1
1
10
100
Percent of Rated Reverse
Voltage
(
%
)
Pulse Duration , sec . ( t )
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214BA (GF1)
Mounting Pad Layout
0.066 (1.68)
0.040 (1.02)
0.066 MIN.
(1.68 MIN.)
0.076 MAX.
(1.93 MAX.)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.060 MIN.
(1.52 MIN.)
0.220
(5.58) REF
0.118 (3.00)
0.100 (2.54)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Document Number 88904
07-Jul-05
www.vishay.com
3
Embedded System
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