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BUK7909-75AIE,127

Description
N-channel TrenchPLUS standard level FET TO-220 5-Pin
CategoryDiscrete semiconductor    The transistor   
File Size707KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK7909-75AIE,127 Overview

N-channel TrenchPLUS standard level FET TO-220 5-Pin

BUK7909-75AIE,127 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeTO-220
package instructionTO-220, 5 PIN
Contacts5
Manufacturer packaging codeSOT263B
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)739 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage75 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.009 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)272 W
Maximum pulsed drain current (IDM)480 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
V
DS
I
D
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2;
see
Figure 3
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C;
V
GS
> 10 V
[1]
Min
-
-
Typ
-
-
Max
75
120
Unit
V
A
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
ratio of drain current
to sense current
-
8
9
mΩ
I
D
/I
sense
450
500
550
[1]
Current is limited by power dissipation chip rating.
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