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BYM26C(Z)

Description
Rectifier Diode, 1 Element, 2.3A, 600V V(RRM),
Categorydiode    Rectifier diode   
File Size48KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BYM26C(Z) Overview

Rectifier Diode, 1 Element, 2.3A, 600V V(RRM),

BYM26C(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.65 V
Maximum non-repetitive peak forward current45 A
Number of components1
Maximum operating temperature150 °C
Maximum output current2.3 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.03 µs
surface mountNO
Base Number Matches1
BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
BYM26A(Z) --- BYM26E(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 2.3 A
SUPER FAST RECTIFIER
DO - 27
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYM26A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYM26B
400
280
400
BYM26C
600
420
600
2.3
BYM26D
800
560
800
BYM26E UNITS
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10
ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
30
85
45.0
A
Maximum instantaneous forw ard voltage
@ 2.0A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
2.65
10.0
150.0
75
75
75
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264019
BL
GALAXY ELECTRICAL
1.

BYM26C(Z) Related Products

BYM26C(Z) BYM26D(Z) BYM26E(Z)
Description Rectifier Diode, 1 Element, 2.3A, 600V V(RRM), Rectifier Diode, 1 Element, 2.3A, 800V V(RRM), Rectifier Diode, 1 Element, 2.3A, 1000V V(RRM),
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.65 V 2.65 V 2.65 V
Maximum non-repetitive peak forward current 45 A 45 A 45 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 2.3 A 2.3 A 2.3 A
Maximum repetitive peak reverse voltage 600 V 800 V 1000 V
Maximum reverse recovery time 0.03 µs 0.075 µs 0.075 µs
surface mount NO NO NO
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. -

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