INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 750(Min)@ I
C
= -
1.5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -60V(Min)- BDT60F; -80V(Min)- BDT60AF
-100V(Min)- BDT60BF; -120V(Min)- BDT60CF
·Complement
to Type BDT61F/61AF/61BF/61CF
APPLICATIONS
·Designed
for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
PARAMETER
BDT60F
Collector-Base
Voltage
BDT60AF
BDT60BF
BDT60CF
BDT60F
Collector-Emitter
Voltage
BDT60AF
BDT60BF
BDT60CF
V
EBO
I
C
I
CM
I
B
B
BDT60F/AF/BF/CF
VALUE
-60
-80
UNIT
V
CBO
V
-100
-120
-60
-80
V
-100
-120
-5
-4
-6
-0.1
25
150
-65~150
V
A
A
A
W
℃
℃
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT60F
BDT60AF
I
C
= -30mA; I
B
= 0
BDT60BF
BDT60CF
V
CE
(sat)
V
BE
(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
V
ECF-1
V
ECF-2
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
C-E Diode Forward Voltage
C-E Diode Forward Voltage
I
C
= -1.5A; I
B
= -6mA
B
BDT60F/AF/BF/CF
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
-100
-120
-2.5
-2.5
-0.2
-1
-0.2
-5
2000
750
250
2
2.1
V
V
V
V
mA
mA
mA
I
C
= -1.5A ; V
CE
= -3V
V
CB
= -30V; I
E
= 0
V
CB
=
1
/
2
V
CBO
; I
E
= 0; T
J
=150℃
V
CE
=
1
/
2
V
CEO
; I
B
= 0
V
EB
= -5V; I
C
= 0
I
C
= -0.5A ; V
CE
= -3V
I
C
= -1.5A ; V
CE
= -3V
I
C
= -4A ; V
CE
= -3V
I
F
= 1.5A
I
F
= 4A
Switching Times
t
on
t
off
Turn-On Time
I
C
= -1.5A; I
B1
= -I
B2
= -6mA
Turn-Off Time
1.5
5.0
μs
0.3
1.5
μs
isc Website：www.iscsemi.cn
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