Tentative
DMC366A1
Silicon NPN epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For digital circuit
Marking Symbol : F3
Package Code : SSSMini6-F2-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Tr2
Collector current
Total power dissipation
*1
Overall
Junction temperature
Storage temperature
DMC366A1
Total pages
page
Internal Connection
6
5
4
R1
Tr 1
Tr 2
R2
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Rating
50
50
80
125
150
-55 to +150
Unit
V
V
mA
mW
°C
°C
R2
R1
1
2
3
Resistance
value
1.
Emitter(Tr1)
2.
Emitter(Tr2)
3. Base(Tr2)
R1
R2
10
10
kΩ
kΩ
Note: 1. *1 Measuring on substrate at 17 mm × 10 mm × 1 mm
Pin name
4.
Collector(Tr2)
5. Base(Tr1)
6.
Collector(Tr1)
Electrical Characteristics Ta = 25 °C ±3 °C
Tr1、Tr2
Parameter
Symbol
Conditions
IC = 10
μA,
IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 100
μA
Min
50
50
Typ
Max
0.1
0.5
0.5
Unit
V
V
μA
μA
mA
-
V
V
kΩ
-
Collector-base voltage (Emitter open)
VCBO
*1
VCEO
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
Resistance ratio
R1/R2
35
0.25
2.1
-30%
0.8
10
1.0
0.8
+30%
1.2
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2. *1 Pulse measurement
Packing
Embossed type (Thermo-compression sealing) R specification : 10 000 pcs / reel
2010.3.15
2010.11.25
Prepared
Revised
Semiconductor Company, Panasonic Corporation
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Consult our sales staff in advance for information on the following applications:
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