|
BB639CE6327 |
BB639CE6433 |
| Description |
Variable Capacitance Diode, Very High Frequency, 39pF C(T), 35V, Silicon |
Variable Capacitance Diode, Very High Frequency, 39pF C(T), 35V, Silicon |
| Maker |
SIEMENS |
SIEMENS |
| package instruction |
R-PDSO-G2 |
R-PDSO-G2 |
| Reach Compliance Code |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
| Is Samacsys |
N |
N |
| Other features |
2.5% MATCHED SETS AVAILABLE |
2.5% MATCHED SETS AVAILABLE |
| Minimum breakdown voltage |
35 V |
35 V |
| Configuration |
SINGLE |
SINGLE |
| Minimum diode capacitance ratio |
13.5 |
13.5 |
| Nominal diode capacitance |
39 pF |
39 pF |
| Diode component materials |
SILICON |
SILICON |
| Diode type |
VARIABLE CAPACITANCE DIODE |
VARIABLE CAPACITANCE DIODE |
| frequency band |
VERY HIGH FREQUENCY |
VERY HIGH FREQUENCY |
| JESD-30 code |
R-PDSO-G2 |
R-PDSO-G2 |
| Number of components |
1 |
1 |
| Number of terminals |
2 |
2 |
| Maximum operating temperature |
125 °C |
125 °C |
| Minimum operating temperature |
-55 °C |
-55 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
SMALL OUTLINE |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum reverse current |
0.01 µA |
0.01 µA |
| Reverse test voltage |
30 V |
30 V |
| surface mount |
YES |
YES |
| Terminal form |
GULL WING |
GULL WING |
| Terminal location |
DUAL |
DUAL |
| Base Number Matches |
1 |
1 |