BC817K-25 datasheet, PDF - EEWORLD Datasheet

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BC817K-25: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryThe transistor; File Size91KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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BC817K-25 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC817K-25 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	170 MHz
Base Number Matches	1

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BC817K / BC818K

NPN

Surface Mount Low Rth Si-Epi-Planar Transistors

Si-Epi-Planar Low Rth Transistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2.9

±0.1

0.4

3

1.3

1.1

NPN

500 mW

SOT-23

(TO-236)

0.01 g

Version 2011-10-26

Plastic case

Kunststoffgehäuse

±0.1

Type

Code

1

1.9

2

2.5 max

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

A

= 25°C)

Collector-Base-volt. – Kollektor-Basis-Spannung

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Base current – Basisstrom

Peak Base current – Basis-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

C open

B open

C open

T

sp

≤ 115°C

V

CBO

V

CEO

V

EBO

P

tot

I

C

I

CM

I

B

I

BM

T

j

T

S

Grenzwerte (T

A

= 25°C)

BC817K

50 V

45 V

5V

500 mW

500 mA

1A

100 mA

200 mA

+150°C

-55…+150°C

BC818K

30 V

25 V

Characteristics (T

j

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

2

)

V

CE

= 1 V, I

C

= 100 mA

Group -16

Group -25

Group -40

all groups

h

FE

h

FE

h

FE

h

FE

V

CEsat

V

BEsat

100

160

250

40

–

Kennwerte (T

j

= 25°C)

Typ.

–

Max.

250

400

630

–

0.7 V

1.2 V

V

CE

= 1 V, I

C

= 500 mA

I

C

= 500 mA, I

B

= 50 mA

I

C

= 500 mA, I

B

= 50 mA

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.

2

)

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung

2

)

2

Tested with pulses t

p

= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t

p

= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

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Description	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	DIOTEC	DIOTEC	DIOTEC	DIOTEC	DIOTEC	DIOTEC
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	45 V	25 V	25 V	45 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	250	160	250	100	100
JEDEC-95 code	TO-236	TO-236	TO-236	TO-236	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	170 MHz	170 MHz	170 MHz	170 MHz	170 MHz	170 MHz
Is Samacsys	N	N	N	N	-	-
Base Number Matches	1	1	1	1	-	-

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