BC817K-25E6327 datasheet, PDF - EEWORLD Datasheet

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BC817K-25E6327: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3; CategoryThe transistor; File Size848KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BC817K-25E6327 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3

BC817K-25E6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	170 MHz
Base Number Matches	1

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BC817K.../BC818K...

NPN Silicon AF Transistor

•

For general AF applications

•

High collector current

•

High current gain

•

Low collector-emitter saturation voltage

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

Type

BC817K-16

BC817K-16W

BC817K-25

BC817K-25W

BC817K-40

BC817K-40W

BC818K-16W

BC818K-40

Marking

6As

6Bs

6Cs

6Es

6Gs

Pin Configuration

1=B 2=E 3=C -

Package

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

2011-09-19

BC817K-25E6327 Related Products

	BC817K-25E6327	BC817K-25WH6433	BC818-25E6327	BC817-25E6433	BC818-40E6327	BC817-40E6433	BC817-16E6433
Description	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	45 V	25 V	45 V	25 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	160	100	100	170	170	60
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	170 MHz	170 MHz	170 MHz	170 MHz	170 MHz	170 MHz	170 MHz
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Humidity sensitivity level	1	-	1	1	1	1	1
Maximum power dissipation(Abs)	0.5 W	-	0.33 W	0.33 W	0.33 W	0.33 W	0.33 W
Base Number Matches	1	1	1	1	-	-	-
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified

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