BC 817W / BC 818W
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2
±0.1
0.3
3
225 mW
SOT-323
0.01 g
1
±0.1
1.25
±0.1
2.1
±0.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
2
1.3
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
B shorted
E open
C open
V
CE0
V
CES
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
BC 817W
45 V
50 V
50 V
5V
225 mW
1
)
500 mA
1000 mA
200 mA
1000 mA
150
/
C
- 65…+ 150
/
C
BC 818W
25 V
30 V
30 V
Characteristics, T
j
= 25
/
C
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 500 mA
V
CE
= 1 V, I
C
= 100 mA
BC817W
BC818W
Group -16W
Group -25W
Group -40W
h
FE
h
FE
h
FE
h
FE
h
FE
100
40
100
160
250
Kennwerte, T
j
= 25
/
C
Typ.
–
–
160
250
400
Max.
600
–
250
400
600
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
8
General Purpose Transistors
Characteristics, T
j
= 25
/
C
Min.
Collector saturation voltage – Kollektor-Sättigungsspg.
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
V
CE
= 1 V, - I
C
= 500 mA
I
E
= 0, V
CB
= 20 V
I
E
= 0, V
CB
= 20 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 4 V
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 817-16W = 6A
BC 817W = 6D
BC 818-16W = 6E
BC 818W = 6H
BC 818-25W = 6F
BC 817W / BC 818W
Kennwerte, T
j
= 25
/
C
Typ.
–
–
–
–
–
–
170 MHz
6 pF
Max.
0.7 V
1.2 V
1.2 V
100 nA
5
:
A
100 nA
–
–
620 K/W
1
)
V
CEsat
V
BEsat
V
BE
I
CB0
I
CB0
I
EB0
f
T
C
CB0
–
–
–
–
–
–
100 MHz
–
R
thA
Base saturation voltage – Basis-Sättigungsspannung
Collector-Base cutoff current – Kollektorreststrom
Collector-Base Capacitance – Kollektor-Basis-Kapazität
BC 807W / BC 808W
BC 817-25W = 6B
BC 817-40W = 6C
BC 818-40W = 6G
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
9
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