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BTA06-200B

Description
TRIAC,200V V(DRM),6A I(T)RMS,TO-220
CategoryTrigger device   
File Size179KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BTA06-200B Overview

TRIAC,200V V(DRM),6A I(T)RMS,TO-220

BTA06-200B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instruction,
Reach Compliance Codenot_compliant
Is SamacsysN
Critical rise rate of commutation voltage - minimum value10 V/us
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current50 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.6 V
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Maximum rms on-state current6 A
Off-state repetitive peak voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Base Number Matches1

BTA06-200B Related Products

BTA06-200B BTB06-200B
Description TRIAC,200V V(DRM),6A I(T)RMS,TO-220 TRIAC,200V V(DRM),6A I(T)RMS,TO-220
Is it Rohs certified? incompatible incompatible
Reach Compliance Code not_compliant not_compliant
Critical rise rate of commutation voltage - minimum value 10 V/us 10 V/us
Critical rise rate of minimum off-state voltage 100 V/us 100 V/us
Maximum DC gate trigger current 50 mA 50 mA
Maximum holding current 50 mA 50 mA
JESD-609 code e0 e0
Maximum leakage current 0.5 mA 0.5 mA
Maximum on-state voltage 1.6 V 1.6 V
Maximum rms on-state current 6 A 6 A
Off-state repetitive peak voltage 200 V 200 V
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC
Base Number Matches 1 1
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