BC856S/U_BC857S
PNP Silicon AF Transistor Arrays
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated transistor
with good matching in one package
•
BC856S / U, BC857S: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BC856S/U
BC857S
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07175
Type
BC856S
BC856U
BC857S
Marking
3Ds
3Ds
3Cs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
2011-07-25
BC856S/U_BC857S
Maximum Ratings
Parameter
Collector-emitter voltage
BC856S/U
BC857S
Collector-base voltage
BC856S, BC856U
BC857S
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Total power dissipation-
T
S
≤
115 °C, BC856S
T
S
≤
118 °C, BC856U, BC857U
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BC856S, BC857S
BC856U
T
j
T
stg
Symbol
R
thJS
≤
140
≤
130
Symbol
V
CEO
Value
65
45
Unit
-
V
CBO
80
50
V
EBO
I
C
I
CM
P
tot
250
250
150
-65 ... 150
Value
5
100
200
V
mA
-
°C
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-07-25
BC856S/U_BC857S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BC856S/U
I
C
= 10 mA,
I
B
= 0 , BC857S
Unit
-
65
45
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
V
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC856S/U
I
C
= 10 µA,
I
E
= 0 , BC857S
80
50
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
250
290
75
250
700
850
650
-
0.015
5
-
-
630
mV
300
650
-
-
-
mV
750
820
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
-
200
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse
600
-
test: t < 300µs; D < 2%
3
2011-07-25
BC856S/U_BC857S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 2 kΩ
F
-
-
10
dB
h
22e
-
30
-
µS
h
21e
-
330
-
-
h
12e
-
2
-
10
-4
h
11e
-
4.5
-
kΩ
C
eb
-
8
-
C
cb
-
1.5
-
pF
f
T
-
250
-
MHz
Symbol
min.
Values
typ.
max.
Unit
4
2011-07-25
BC856S/U_BC857S
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 5 V
10
3
EHP00382
Collector-emitter saturation voltage
I
C
=
ƒ(V
CEsat
),
h
FE
= 20
10
2
EHP00380
h
FE
5
100 C
25 C
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
5
10
1
5
10
5
0
10
0
10
-2
5 10
-1
5 10
0
5 10
1
mA 10
2
10
-1
0
0.1
0.2
0.3
0.4
V 0.5
V
CEsat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ(V
BEsat
),
h
FE
= 20
10
2
mA
EHP00379
Collector cutoff current
I
CBO
=
ƒ(T
A
)
V
CBO
= 30 V
10
4
nA
EHP00381
Ι
C
100 C
25 C
-50C
Ι
CB0
10
3
5
10
2
5
10
1
5
10
5
0
10
5
1
max
typ
10
0
5
10
-1
10
-1
0
0.2
0.4
0.6
0.8
V
1.2
V
BEsat
0
50
100
C
T
A
150
5
2011-07-25
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