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PO120-04

Description
100 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size49KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

PO120-04 Overview

100 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

PO120-04 Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknow
ECCN codeEAR99
PO
Provides 0.40
o
C/W Junction-to-Case, Thermal Resistance
75, 100 and 120 Ampere Bridges
ion under the component
This mark indicates recognit
boratories, inc.
program of Underwriters La
PRV/LEG
TYPE NUMBER
100
200
400
PO120-04
PO100-04
PO75-04
600
PO120-06
PO100-06
PO75-06
800
PO120-08
PO100-08
PO75-08
1000
PO120-10
PO100-10
PO75-10
1200
PO120-12
PO100-12
PO75-12
1400
PO120-14
PO100-14
PO75-14
PO120-01 PO120-02
PO100-01 PO100-02
PO75-01
PO75-02
TYPE NUMBER
TYPE NUMBER
ELECTRICAL CHARACTERISTICS
Series Type Number
Max. Repetitive Peak
Reverse Voltage
O
PO 75
PO 100 PO 120
100 to 1400
UNIT
Volts
Max. DC Output Current. Tc=80 C
Max. DC Reverse Current @ PRV and 125
o
C, I
R
Max. Peak Non-Rep. Surge Current,8.3mS
Max.I
2
t for Fusing (t < 8.3ms)
Max. Instantaneous Forward Voltage @ IF=100Apk
Pulse Width=300
S
. Duty cycle<2.0%
Max. Isolation Voltage
Thermal Resistance R
0jc
Junction To Case
Operating Temperature Range,
75
5
1000
4000
1.3
2000
100
5
1000
4000
1.3
2000
120
5
1000
4000
1.3
2000
Adc
MmA.
Apk
A
2
SEC.
Vpk
V
RMS
o
0.40 typ. 0.40 typ. 0.40 typ.
-55 to+150
o
C
C/W
EDI reserves the right to change these specifications at any time without notice
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