BCP5316Q
80V PNP MEDIUM POWER TRANSISTORS IN SOT223
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the
stringent requirements of Automotive Applications.
Applications
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
Features
BV
CEO
> -80V
I
C
= -1A High Continuous Collector Current
I
CM
= -2A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage V
CE(sat)
< -500mV @ -0.5A
Complementary NPN type: BCP5616Q
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
SOT223
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
BCP5316QTA
Notes:
Compliance
Automotive
Marking
BCP 5316
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
BCP = Product Type Marking Code, Line 1
5316 = Product Type Marking Code, Line 2
YWW = Date Code Marking
Y = Last Digit of the Year ex: 2 = 2012
WW = Week Code 01-52
BCP
5316
YWW
BCP5316Q
Datasheet Number: DS36980 Rev. 1 – 2
1 of 7
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March 2014
© Diodes Incorporated
BCP5316Q
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
-100
-80
-5
-1
-2
-100
-200
Unit
V
V
V
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 6)
(Note 7)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
2
62
19.4
-65 to +150
Unit
W
C/W
C/W
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BCP5316Q
Datasheet Number: DS36980 Rev. 1 – 2
2 of 7
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March 2014
© Diodes Incorporated
BCP5316Q
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
160
60
50
40
30
20
10
0
100µ
1m
10m 100m
D=0.2
D=0.1
Single Pulse
D=0.05
Maximum Power (W)
50mm x 50mm 1oz Cu
T
amb
=
25°C
140
120
100
80
60
40
20
0
100µ
1m
10m 100m
50mm x 50mm 1oz Cu
T
amb
=
25°C
Single pulse
D=0.5
1
10
100
1k
1
10
100
1k
Transient Thermal Impedance
Max Power Dissipation (W)
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
1oz Cu
Pulse Width (s)
Pulse Width (s)
Pulse Power Dissipation
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
BCP5316Q
Datasheet Number: DS36980 Rev. 1 – 2
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March 2014
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BCP5316Q
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
h
FE
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Transition Frequency
Output Capacitance
Notes:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-100
-80
-5
—
—
25
100
25
—
—
150
—
Typ
—
—
—
—
—
—
—
—
Max
—
—
—
-0.1
-20
-20
—
Unit
V
V
V
µA
nA
—
V
V
MHz
pF
250
—
V
CE(sat)
V
BE(on)
f
T
C
obo
—
—
—
—
-0.5
-1.0
—
25
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -10µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
EB
= -4V
I
C
= -5mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, V
CE
= -2V
I
C
= -50mA, V
CE
= -10V
f = 100MHz
V
CB
= -10V, f = 1MHz
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
1.0
I
B
= 10mA
500
V
CE
= -5V
I
C
, COLLECTOR CURRENT (A)
0.8
I
B
= 8mA
400
h
FE
, DC CURRENT GAIN
I
B
= 6mA
T
A
= 150°C
0.6
I
B
= 4mA
300
T
A
= 85°C
0.4
I
B
= 2mA
200
T
A
= 25°C
0.2
100
T
A
= -55°C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.5
1.0
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
0.8
T
A
= -55°C
0.3
T
A
= 150°C
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.4
0.2
T
A
= 85°C
0.2
V
CE
= -2V
0.1
T
A
= 25°C
T
A
= -55°C
0
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
BCP5316Q
Datasheet Number: DS36980 Rev. 1 – 2
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March 2014
© Diodes Incorporated
BCP5316Q
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
300
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
250
1.0
0.8
T
A
= -55°C
200
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
150
0.4
100
V
CE
= -5V
f = 100MHz
0.2
I
C
/ I
B
= 10
50
0
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
20
40
60
80
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
0
160
140
120
CAPACITANCE(pF)
100
80
C
ibo
f = 1MHz
60
40
20
C
obo
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCP5316Q
Datasheet Number: DS36980 Rev. 1 – 2
5 of 7
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March 2014
© Diodes Incorporated
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