EEWORLDEEWORLDEEWORLD

Part Number

Search

BCP69-25H6327

Description
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4
CategoryThe transistor   
File Size514KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

BCP69-25H6327 Overview

Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4

BCP69-25H6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BCP69-25
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
4
2
1
3
Type
BCP69-25
Marking
...-25*
1=B
2=C
Pin Configuration
3=E
4=C
-
-
Package
SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
114 °C
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Value
20
25
25
5
1
2
100
200
3
W
mA
A
Unit
V
Thermal Resistance
Parameter
Symbol
R
thJS
1
Value
12
Unit
Junction - soldering point
1)
K/W
2011-09-19

BCP69-25H6327 Related Products

BCP69-25H6327 BCP69-25E6327 BCP69-16E6327
Description Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4 Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Is it Rohs certified? conform to conform to incompatible
Maker Infineon Infineon Infineon
Reach Compliance Code compliant unknown not_compliant
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 160 100
JESD-30 code R-PDSO-G4 R-PSSO-G3 R-PSSO-G3
JESD-609 code e3 e4 e0
Number of components 1 1 1
Number of terminals 4 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
surface mount YES YES YES
Terminal surface MATTE TIN Silver (Ag) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Is it lead-free? Lead free Lead free -
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PSSO-G3 -
Is Samacsys N N -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Base Number Matches 1 1 -
Maximum operating temperature - 150 °C 150 °C
Maximum power dissipation(Abs) - 1.5 W 1.5 W
Certification status - Not Qualified Not Qualified
WINCE driver project outsourcing
There are two WINCE driver projects outsourcing: 1. Driver program for 16C554 multi-serial port chip under S3C2416 2. Sound driver for S3C2416 (the chip driver code under 2442 platform can be used as ...
hua1232925 Embedded System
Hello everyone
I haven't been here for a long time. I miss you all....
frozenviolet Automotive Electronics
Introduction to LED Process Technology
[table=95%][tr][td]Introduction to LED technology[/td][/tr][/table][table=95%][tr][td] [/td][/tr][/table][table=95%][tr][td] In recent years, LED technology has made significant progress, and due to i...
songbo PCB Design
It's nice here
I want to learn something, I found a place...
mars_v Embedded System
How to beautify the interface of windows mobile program
I made a simple demo. All functions are implemented, but it is ugly... [img]http://forum.eeworld.net/PointForum/ui/scripts/eeworld/Plugin/003/monkey/2.gif[/img]...
wwwapple Embedded System
How to use Altera's Cyclone III series FPGA to realize a digital photo frame with camera function?
Urgent, urgent, urgent, urgent, urgent!!! I'm learning FPGA at the Science and Technology Innovation Base recently. The teacher assigned us a task to make a work. When we defended our thesis, we said ...
hzh0608 FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2824  459  1155  136  2197  57  10  24  3  45 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号