BCR114...
NPN Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor (R
1
=4.7kΩ,
R
2
=10kΩ)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BCR114F
C
3
R
1
R
2
1
B
2
E
EHA07184
Type
BCR114F
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR114F,
T
S
≤
128°C
Junction temperature
Storage temperature
Marking
U4s
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
TSFP-3
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
50
50
30
5
100
250
150
-65 ... 150
Value
≤
90
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point
2)
, BCR114F
1
Pb-containing
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-09-17
BCR114...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain
1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
R
1
R
1
/R
2
3.2
0.42
4.7
0.47
6.2
0.52
kΩ
-
V
i(on)
0.5
-
1.4
V
i(off)
0.5
-
1.1
V
CEsat
-
-
0.3
V
h
FE
30
-
-
-
I
EBO
-
-
520
µA
I
CBO
-
-
100
nA
V
(BR)CBO
50
-
-
Unit
V
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
-
-
160
3
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2007-09-17
BCR114...
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5 V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(I
C
),
h
FE
= 20
10
-1
A
h
FE
10
2
I
C
10
-2
10
1
10
0 -4
10
-3
-2
10
10
A
10
-1
10
-3
0
0.1
0.2
0.3
V
0.5
I
C
V
CEsat
Input on Voltage
V
i
(on)
=
ƒ
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
Input off voltage
V
i(off)
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
-2
A
A
10
-3
10
-2
I
C
I
C
10
-4
10
-3
10
-5
10
-4 -1
10
0
1
10
10
V
10
2
10
-6
0
0.5
1
V
2
V
i(on)
V
i(off)
3
2007-09-17
BCR114...
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR114F
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BCR114F
10
2
300
mW
K/W
250
225
P
tot
200
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
10
1
10
0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
R
thJS
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
BCR114F
10
3
P
totmax
/P
totDC
10
2
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
4
2007-09-17
Package TSFP-3
BCR114...
Package Outline
1.2
±0.05
10˚ MAX.
0.8
±0.05
0.2
±0.05
1.2
±0.05
0.2
±0.05
3
0.55
±0.04
1
2
0.2
±0.05
0.4
±0.05
0.4
±0.05
0.15
±0.05
Foot Print
0.4
0.45
0.4
0.4
Marking Layout (Example)
Manufacturer
1.05
Pin 1
BCR847BF
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.3
1.2
1.5
8
0.2
Pin 1
1.35
0.7
5
2007-09-17
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