EEWORLDEEWORLDEEWORLD

Part Number

Search

APTGT75SK120D1

Description
Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size185KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

APTGT75SK120D1 Overview

Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

APTGT75SK120D1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeMODULE
package instructionMODULE-7
Contacts7
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)110 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
JESD-609 codee0
Number of components1
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)830 ns
Nominal on time (ton)390 ns
Base Number Matches1
APTGT75SK120D1
Trench IGBT
®
Power Module
Q1
4
5
3
Buck Chopper
V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
- M5 power connectors
High level of integration
1
2
3
4
5
7
6
2
1
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
SCSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short Circuit Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
300A@900V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT75SK120D1 – Rev 0
January, 2004
Max ratings
1200
110
75
175
±20
357
Unit
V
A
V
W

APTGT75SK120D1 Related Products

APTGT75SK120D1 APTGT75SK120D1G
Description Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 igbt 1200v 110a 357w D1
Is it lead-free? Contains lead Lead free
Is it Rohs certified? incompatible conform to
Maker Microsemi Microsemi
Parts packaging code MODULE MODULE
package instruction MODULE-7 FLANGE MOUNT, R-XUFM-X7
Contacts 7 7
Reach Compliance Code unknown compliant
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 110 A 110 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
JESD-609 code e0 e1
Number of components 1 1
Number of terminals 7 7
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN SILVER COPPER
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 830 ns 830 ns
Nominal on time (ton) 390 ns 390 ns
Base Number Matches 1 1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1558  831  2107  907  477  32  17  43  19  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号