IRLR014TRLPBF datasheet, PDF - EEWORLD Datasheet

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IRLR014TRLPBF: DescriptionPower Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,; CategoryThe transistor; File Size287KB，5 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRLR014TRLPBF Overview

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

IRLR014TRLPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	47 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	7.7 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum pulsed drain current (IDM)	31 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRLR014TRLPBF Related Products

	IRLR014TRLPBF	IRLR014TRPBF
Description	Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,	Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	7.7 A	7.7 A
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	25 W	25 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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