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BAV16W

Description
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2
Categorydiode    Rectifier diode   
File Size84KB,2 Pages
ManufacturerHitano Enterprise Corp
Environmental Compliance
Download Datasheet Parametric View All

BAV16W Overview

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2

BAV16W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerHitano Enterprise Corp
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOW POWER LOSS
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
HITANO ENTERPRISE CORP.
BAV16W THRU BAV21W
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE
VOLTAGE RANGE - 75 to 200 Volts
CURRENT - 0.2 to 0.25 Ampere
FEATURES
* Surface Mount Package Ideally Suited for Automatic
Insertion
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
.154(3.9)
.141(3.6)
SOD-123
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Solder plated, solderable per
MIL-STD-202E, Method 208 guaranteed
* Mounting position: Any
* Weight: 0.008 grams Approx.
.028(0.7)
.019(0.5)
.110(2.8)
.098(2.5)
.071(1.8)
.055(1.4)
.008
MAX.
(0.2)
.005
MAX.
(0.12)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive
load.
For capacitive load, derate current by 20%.
.053(1.4)
.037(1.0)
.016
MIN.
(0.4)
Dimensions in inches and (millimeters)
SYMBO L
Maximum Reverse Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Rectified Current
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Power Dissipation Tamb=25 C
Maximum Forward Voltage (@I
F
=100mA)
Maximum Reverse Current (@V
R
=V
R
Max
)
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance(Note 2)
Typical Thermal Resistance
Operating and Storage Temperature Range
o
BAV16W
75
100
250
2.0
350
BAV19W
100
120
BAV20W
150
200
200
2.5
350
1.0
0.1
50
1.5
375
-55 to +125
BAV21W
200
250
UNITS
V
V
mA
A
mW
V
µA
nS
pF
o
V
R
V
RRM
Io
I
FSM
Ptot
V
F
I
R
trr
C
J
R
θ
JA
T
J
,T
STG
0.855(@I
F
=10mA)
1.0
6.0
2.0
450
C/W
o
C
Note: 1. Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, V
R
=6V to I
R
=1mA, R
L
=100Ω
2. Measured at 1MHz and V
R
=0

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