Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon,
| Parameter Name | Attribute value |
| Maker | SHINDENGEN |
| package instruction | R-PSFM-T4 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Minimum breakdown voltage | 200 V |
| Shell connection | ISOLATED |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V |
| JESD-30 code | R-PSFM-T4 |
| Maximum non-repetitive peak forward current | 200 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Maximum output current | 3.2 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Certification status | Not Qualified |
| Maximum reverse current | 10 µA |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Base Number Matches | 1 |
| D15XB20-4003 | PTN1005K1290BST0 | D15XB60-4003 | D15XB60-4002 | D15XB60-4001 | D15XB20-4001 | |
|---|---|---|---|---|---|---|
| Description | Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, | RESISTOR, THIN FILM, 0.25 W, 0.1 %, 100 ppm, 129 ohm, SURFACE MOUNT, 1005, CHIP, ROHS COMPLIANT | Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, | Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, | Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, | Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, |
| package instruction | R-PSFM-T4 | SMT, 1005 | R-PSFM-T4 | R-PSFM-T4 | R-PSFM-T4 | R-PSFM-T4 |
| Reach Compliance Code | unknown | compliant | unknown | unknown | unknown | unknown |
| Number of terminals | 4 | 2 | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 155 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package form | FLANGE MOUNT | SMT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| surface mount | NO | YES | NO | NO | NO | NO |
| Minimum breakdown voltage | 200 V | - | 600 V | 600 V | 600 V | 200 V |
| Shell connection | ISOLATED | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | BRIDGE, 4 ELEMENTS | - | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE | - | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V | - | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| JESD-30 code | R-PSFM-T4 | - | R-PSFM-T4 | R-PSFM-T4 | R-PSFM-T4 | R-PSFM-T4 |
| Maximum non-repetitive peak forward current | 200 A | - | 200 A | 200 A | 200 A | 200 A |
| Number of components | 4 | - | 4 | 4 | 4 | 4 |
| Phase | 1 | - | 1 | 1 | 1 | 1 |
| Maximum output current | 3.2 A | - | 3.2 A | 3.2 A | 3.2 A | 3.2 A |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum reverse current | 10 µA | - | 10 µA | 10 µA | 10 µA | 10 µA |
| Terminal form | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
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