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D15XB60-4001

Description
Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size347KB,2 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric Compare View All

D15XB60-4001 Overview

Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon,

D15XB60-4001 Parametric

Parameter NameAttribute value
MakerSHINDENGEN
package instructionR-PSFM-T4
Reach Compliance Codeunknown
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current3.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

D15XB60-4001 Related Products

D15XB60-4001 PTN1005K1290BST0 D15XB20-4003 D15XB60-4003 D15XB60-4002 D15XB20-4001
Description Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, RESISTOR, THIN FILM, 0.25 W, 0.1 %, 100 ppm, 129 ohm, SURFACE MOUNT, 1005, CHIP, ROHS COMPLIANT Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon, Bridge Rectifier Diode, 1 Phase, 3.2A, Silicon,
package instruction R-PSFM-T4 SMT, 1005 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code unknown compliant unknown unknown unknown unknown
Number of terminals 4 2 4 4 4 4
Maximum operating temperature 150 °C 155 °C 150 °C 150 °C 150 °C 150 °C
Package form FLANGE MOUNT SMT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
surface mount NO YES NO NO NO NO
Minimum breakdown voltage 600 V - 200 V 600 V 600 V 200 V
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V - 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Maximum non-repetitive peak forward current 200 A - 200 A 200 A 200 A 200 A
Number of components 4 - 4 4 4 4
Phase 1 - 1 1 1 1
Maximum output current 3.2 A - 3.2 A 3.2 A 3.2 A 3.2 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse current 10 µA - 10 µA 10 µA 10 µA 10 µA
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE
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