C45C5 datasheet, PDF - EEWORLD Datasheet

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C45C5: DescriptionPower Bipolar Transistor, 4A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryThe transistor; File Size72KB，3 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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C45C5 Overview

Power Bipolar Transistor, 4A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

C45C5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Rectron Semiconductor
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

See Below

for

Part #

TO-220 - Power Transistors and Darlingtons

TO-220

4

1 2

3

Pin Config

1. Base

2. Collector

3. Emitter

4. Collector

Dimensions in millimeters

Electrical Characteristics (Ta=25

o

C)

Part #

Polari ty V

CBO

(V)

Mi n

NPN

PNP

NPN

PNP

NPN

PNP

NPN

3

V

C EO

(V)

Mi n

70

40

60

70

50

45

50

70

100

60

100

4

V

EBO

(V)

Mi n

7

5

P

D

(W)

36

40

30

40

65

I

C

(A)

4

7

4

7

2

3

6

I

CES

@ V

CE

h

FE

h

FE

@ I

C

(uA)

(A)

Mi n Max

Max

500

4

500

4

500

4

1000

1

1000

1

1000

1

1000

1

1000

1

200

400

50

60

40

45

40

60

100

60

100

60

100

30

20

30

2.3

30

2.3

25

10

30

2.3

30

2.3

40

15

40

15

25

10

25

10

25

10

30

15

120

80

150

100

150

0.5

1.0

1.5

2.0

7.0

2.5

7.0

1.5

4.0

2.5

7.0

2.0

7.0

0.2

1.0

0.2

1.0

3.0

1.0

3.0

1.0

3.0

0.3

3.0

V

CE

(V)

4

2

4

V

CE

(SAT)

2N5294

2N5296

2N5298

2N6107

2N6109

2N6121

2N6290

2N6292

B D 239C

B D 240C

B D 241A

B D 241C

B D 242C

B D 243C

1

80

60

80

60

45

60

80

115

70

115

100

(V)

Max

1.0

3.5

1.0

3.5

1.0

0.6

1.4

1.0

3.5

1.0

3.5

0.7

1.2

1.5

V

BE (SAT)

@ I

C

(V)

(A)

Max

0.5

1.0

1.5

7.0

2.0

7.0

2.5

1.5

4.0

2.5

7.0

2.0

7.0

1.0

3.0

6.0

f

T

@ I

C

(MHz)

(mA)

Mi n

0.8

10

2.5

4

3

5

3

200

500

1000

500

200

500

200

500

I

CE0

2

I

CBO

V

CES

I

CER

f

T

Typical Values

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