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2SJ506(L)

Description
Power Field-Effect Transistor, 0.18ohm, SC-63, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size52KB,10 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SJ506(L) Overview

Power Field-Effect Transistor, 0.18ohm, SC-63, 3 PIN

2SJ506(L) Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSC-63
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Maximum drain-source on-resistance0.18 Ω
JESD-30 codeR-PSIP-T3
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
Low on-resistance
R
DS(on)
= 0.065
typ. (at V
GS
= –10V, I
D
= –5A)
Low drive current
High speed switching
4V gate drive devices.
Outline
DPAK–2
4
D
4
1 2
G
3
1 2
S
3
1. Gate
2. Drain
3. Source
4. Drain

2SJ506(L) Related Products

2SJ506(L) RCMM1082500GKA22
Description Power Field-Effect Transistor, 0.18ohm, SC-63, 3 PIN RESISTOR, METAL FILM, 1 W, 2 %, 100 ppm, 8250 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
Reach Compliance Code unknown compliant
Number of terminals 3 2
Package shape RECTANGULAR TUBULAR PACKAGE
surface mount NO NO
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