2SK1335(L), 2SK1335(S)
Silicon N-Channel MOS FET
ADE-208-1272 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
No secondary breakdown
•
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3
2SK1335(L), 2SK1335(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at T
C
= 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
200
±20
3
12
3
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
200
±20
—
—
2.0
—
1.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.5
2.3
380
150
35
10
27
30
20
1.0
120
Max
—
—
±10
100
4.0
0.8
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 3 A, V
GS
= 0
I
F
= 3 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
Unit
V
V
µA
µA
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 10 V *
1
I
D
= 2 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
V
GS(off)
R
DS(on)
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
2SK1335(L), 2SK1335(S)
Power vs. Temperature Derating
30
Channel Dissipation Pch (W)
Maximum Safe Operation Area
50
O
is per
Lim at
ite ion
d in
by th
R is
(o
n
20
Drain Current I
D
(A)
10
5
2
1
0.5
0.2
0.1
0.05
0
50
100
Case Temperature T
C
(°C)
150
Ar
)
ea
10
DS
µ
s
0
10
20
D
C
1
io
10
m
µ
s
PW
O
pe
ra
t
m
s
=
s
(1
Sh
n
(T
10
C
=
)
ot
25
°C
)
Ta = 25°C
1
10
100 300 1,000
3
30
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
10 V
7V
Drain Current I
D
(A)
4
5.5 V
3
5.0 V
2
4.5 V
V
GS
= 4.0 V
0
4
12
16
8
20
Drain to Source Voltage V
DS
(V)
0
6V
Drain Current I
D
(A)
Pulse Test
4
5
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
3
2
75°C
1
Ta = 25°C
–25°C
4
10
2
6
8
Gate to Source Voltage V
GS
(V)
1
3
2SK1335(L), 2SK1335(S)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
Pulse Test
4
I
D
= 5 A
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
5
Pulse Test
2
1.0
0.5
V
GS
= 10 V
3
2
15 V
0.2
0.1
1
2A
1A
0
8
20
4
12
16
Gate to Source Voltage V
GS
(V)
0.05
0.2
0.5
5
1
2
Drain Current I
D
(A)
10
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
yfs
(S)
2.0
V
GS
= 10 V
Pulse Test
10
5
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
Pulse Test
–25°C
Tc = 25°C
75°C
1.6
2
1
0.5
1.2
I
D
= 5 A
2A
1A
0.8
0.4
0.2
0.1
0.05
0
–40
0
80
120
40
Case Temperature T
C
(°C)
160
0.1
0.5
2
1
0.2
Drain Current I
D
(A)
5
4
2SK1335(L), 2SK1335(S)
Body to Drain Diode Reverse
Recovery Time
1,000
Reverse Recovery Time t
rr
(ns)
500
di/dt = 50 A/µs, V
GS
= 0
Ta = 25°C
Pulse Test
Capacitance C (pF)
100
1,000
Ciss
Typical Capacitance vs.
Drain to Source Voltage
200
100
50
Coss
10
V
GS
= 10V
Pulse Test
1
Crss
20
10
0.5
2
0.05 0.1 0.2
1
Reverse Drain Current I
DR
(A)
5
0
20
50
10
30
40
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
V
DD
= 50 V
100 V
150 V
V
GS
200
V
DS
V
DD
= 150 V
100 V
50 V
4
I
D
= 3 A
8
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1%
•
•
Switching Time t (ns)
400
16
200
100
50
t
d (off)
t
f
t
r
10
5
0.05
t
d (on)
300
12
20
100
4
0
8
12
16
Gate Charge Qg (nc)
0
20
0.1
0.5
2
0.2
1
Drain Current I
D
(A)
3
5
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