DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D154
BAS240
Schottky barrier diode
Product specification
2001 Feb 05
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Very small ceramic SMD package
•
Low diode capacitance.
handbook, 4 columns
BAS240
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection.
cathode mark
k
k
a
a
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuit
•
Blocking diodes.
Marking: A1.
bottom view
side view
top view
MAM214
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
40
120
120
200
+150
150
V
mA
mA
mA
°C
°C
UNIT
2001 Feb 05
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.2
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD110 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
315
reverse current
diode capacitance
V
R
= 30 V; note 1; see Fig.3
V
R
= 40 V; note 1; see Fig.3
V
R
= 0 V; f = 1 MHz; see Fig.5
380
500
1
1
10
5
CONDITIONS
MAX.
BAS240
UNIT
mV
mV
V
µA
µA
pF
UNIT
K/W
2001 Feb 05
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAS240
10
2
handbook, halfpage
IF
(mA)
10
MLC361 - 1
handbook, halfpage
10
3
MLC362
IR
(µA)
(1)
10
2
10
(1)
(2)
(3)
(4)
1
1
10
1
(2)
10
−1
(3)
10
2
10
−2
0
0.2
0.4
0.6
0.8
V F (V)
1.0
0
10
20
30
VR (V)
40
(1)
(2)
(3)
(4)
T
amb
= 150
°C.
T
amb
= 85
°C.
T
amb
= 25
°C.
T
amb
=
−40 °C.
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
10
3
handbook, halfpage
r diff
(Ω)
10
2
MLC364
MLC363
handbook, halfpage
5
Cd
(pF)
4
3
2
10
1
1
10
1
1
10
IF (mA)
10
2
0
0
10
20
30
VR (V)
40
f = 10 kHz.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Differential forward resistance as a function
of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 05
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package
D
E
BAS240
SOD110
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
1
2
0
0.5
scale
1 mm
UNIT
mm
A
max.
1.6
D
2.10
1.90
E
1.40
1.10
y
0.1
OUTLINE
VERSION
SOD110
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-14
2001 Feb 05
5
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