BUK552-60A datasheet, PDF - EEWORLD Datasheet

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BUK552-60A: DescriptionTRANSISTOR 14 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size236KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK552-60A Overview

TRANSISTOR 14 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

BUK552-60A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	30 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	14 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	60 W
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	140 ns
Maximum opening time (tons)	98 ns
Base Number Matches	1

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BUK552-60A Related Products

	BUK552-60A	RCWP2512383RFKTP69	RCWP25123911K	RCWP2512391G	RCWP2512391J	BUK552-60B
Description	TRANSISTOR 14 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power	RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 100 ppm, 383 ohm, SURFACE MOUNT, 2512, CHIP	RESISTOR, METAL GLAZE/THICK FILM, 1 W, 10 %, 300 ppm, 390 ohm, SURFACE MOUNT, 2512, CHIP	RESISTOR, METAL GLAZE/THICK FILM, 1 W, 2 %, 300 ppm, 390 ohm, SURFACE MOUNT, 2512, CHIP	RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 300 ppm, 390 ohm, SURFACE MOUNT, 2512, CHIP	TRANSISTOR 13 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	3	2	2	2	2	3
surface mount	NO	YES	YES	YES	YES	NO
Maximum operating temperature	175 °C	155 °C	-	150 °C	155 °C	175 °C
Package shape	RECTANGULAR	-	RECTANGULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR
Package form	FLANGE MOUNT	SMT	-	SMT	-	FLANGE MOUNT
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead	-
Objectid	-	1519164558	1914695631	1914695632	1914695633	-
package instruction	-	SMT, 2512	, 2512	, 2512	, 2512	-
Country Of Origin	-	Israel	Israel	Israel	Israel	-
YTEOL	-	7.75	7.55	7.75	7.75	-
JESD-609 code	-	e0	e0	e0	e0	-
Installation features	-	SURFACE MOUNT	SURFACE MOUNT	SURFACE MOUNT	SURFACE MOUNT	-
Minimum operating temperature	-	-65 °C	-55 °C	-55 °C	-65 °C	-
Rated power dissipation(P)	-	1 W	1 W	1 W	1 W	-
Rated temperature	-	70 °C	70 °C	70 °C	70 °C	-
resistance	-	383 Ω	390 Ω	390 Ω	390 Ω	-
Resistor type	-	FIXED RESISTOR	FIXED RESISTOR	FIXED RESISTOR	FIXED RESISTOR	-
size code	-	2512	2512	2512	2512	-
technology	-	METAL GLAZE/THICK FILM	METAL GLAZE/THICK FILM	METAL GLAZE/THICK FILM	METAL GLAZE/THICK FILM	-
Temperature Coefficient	-	100 ppm/°C	300 ppm/°C	300 ppm/°C	300 ppm/°C	-
Terminal surface	-	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	-
Terminal shape	-	WRAPAROUND	WRAPAROUND	WRAPAROUND	WRAPAROUND	-
Tolerance	-	1%	10%	2%	5%	-
Operating Voltage	-	200 V	200 V	200 V	200 V	-

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