PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 03 — 24 March 2005
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Package
Philips
PDTC123YE
PDTC123YK
PDTC123YM
PDTC123YS
[1]
PDTC123YT
PDTC123YU
[1]
Type number
PNP complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
PDTA123YE
PDTA123YK
PDTA123YM
PDTA123YS
PDTA123YT
PDTA123YU
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistors
s
Simplifies circuit design
s
Reduces component count
s
Reduces pick and place costs
1.3 Applications
s
General-purpose switching and
amplification
s
Inverter and interface circuits
s
Circuit drivers
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
3.6
Typ
-
-
2.2
4.5
Max
50
100
2.86
5.5
Unit
V
mA
kΩ
Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3:
Pin
SOT54
1
2
3
input (base)
output (collector)
GND (emitter)
R1
2
Pinning
Description
Simplified outline
Symbol
1
2
3
001aab347
1
R2
3
006aaa145
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
R1
2
1
2
3
001aab348
1
R2
3
006aaa145
SOT54 variant
1
2
3
input (base)
output (collector)
GND (emitter)
R1
2
1
2
3
001aab447
1
R2
3
006aaa145
SOT23; SOT323; SOT346; SOT416
1
2
3
input (base)
GND (emitter)
output (collector)
1
2
006aaa144
sym007
3
R1
3
1
R2
2
SOT883
1
2
3
input (base)
GND (emitter)
output (collector)
1
3
2
Transparent
top view
1
R2
R1
3
2
sym007
9397 750 14017
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 March 2005
2 of 11
Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
3. Ordering information
Table 4:
Ordering information
Package
Name
PDTC123YE
PDTC123YK
PDTC123YM
SC-75
SC-59A
SC-101
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Type number
PDTC123YS
[1]
SC-43A
PDTC123YT
PDTC123YU
[1]
-
SC-70
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5:
Marking codes
Marking code
[1]
19
31
G7
TC123Y
*AL
*19
Type number
PDTC123YE
PDTC123YK
PDTC123YM
PDTC123YS
PDTC123YT
PDTC123YU
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14017
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 March 2005
3 of 11
Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
T
stg
T
j
T
amb
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
50
50
5
+12
−5
100
100
Unit
V
V
V
V
V
mA
mA
single pulse;
t
p
≤
1ms
T
amb
≤
25
°C
[1]
[1]
[2] [3]
[1]
[1]
[1]
-
-
-
-
-
-
-
−65
-
−65
150
250
250
500
250
200
+150
150
+150
mW
mW
mW
mW
mW
mW
°C
°C
°C
storage temperature
junction temperature
ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60
µm
copper strip line, standard footprint.
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
[1]
[2]
[3]
9397 750 14017
Conditions
in free air
[1]
[1]
[2] [3]
[1]
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60
µm
copper strip line, standard footprint.
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 March 2005
4 of 11
Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
=10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
µA
V
CE
= 300 mV; I
C
= 20 mA
Min
-
-
-
-
35
-
-
2.5
1.54
3.6
-
Typ
-
-
-
-
-
-
0.75
1.15
2.2
4.5
-
Max
100
1
50
700
-
150
0.3
-
2.86
5.5
2
pF
mV
V
V
kΩ
Unit
nA
µA
µA
µA
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
9397 750 14017
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 March 2005
5 of 11
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