AP0430NA datasheet, PDF - EEWORLD Datasheet

AP0430NA: DescriptionSmall Signal Field-Effect Transistor, 0.015A I(D), 300V, 8-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size90KB，3 Pages; ManufacturerSupertex

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AP0430NA Overview

Small Signal Field-Effect Transistor, 0.015A I(D), 300V, 8-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Supertex
package instruction	IN-LINE, R-PDIP-T18
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	GATE PROTECTED
Configuration	COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V
Maximum drain current (Abs) (ID)	0.015 A
Maximum drain current (ID)	0.015 A
Maximum drain-source on-resistance	600 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.2 pF
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
Number of components	8
Number of terminals	18
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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