INFRARED DETECTOR
InAs photovoltaic detector
P8079 series, P7163
Infrared detectors with high sensitivity and high-speed response
InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm.
These detectors offer better characteristics than PbSe photoconductive detectors.
Features
Applications
l
Thermoelectrically cooled type: high sensitivity
and high-speed response
l
Metal dewar type available for low light measurement
l
Long-wavelength cut-off of up to 3.8 µm
l
Easy-to-use detector/preamp modules available
l
Gas analysis
l
Infrared radiation measurement
l
Infrared spectrophotometry
l
FTIR
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller
C1103-04
l
Infrared detector module with preamp
P4631-01 (Integrated with P8079-21)
l
Amplifiers for InAs photovoltaic detector C4159-05
(only for P7163)
s
Specifications / Absolute maximum ratings
Type No.
D im ensional
outline/
W indow
m aterial *
Package
Cooling
Active
area
(mm)
φ1
Thermistor
power
dissipation
(mW)
-
0.2
-
Absolute maximum ratings
Operating
Reverse
temperature
voltage
Topr
V
R
(V)
(°C)
0.5
-40 to +60
Storage
temperature
Tstg
(°C)
-55 to +60
P8079-01
TO-5
Non-cooled
➀
/S
P8079-11
One-stage TE-cooled
TO-8
➁
/S
P8079-21
Two-stage TE-cooled
P7163
Metal dewer
LN
2
➂
/S
* Window material S: sapphire glass
s
Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent
Photo
Peak
Cut-off
condition
sensitivity
sensitivity
wavelength
S
E le m en t
wavelength
te m pe ra tu re
λc
λ=λp
λp
T
(°C)
25
-10
-30
-196
(µm)
3.45
3.30
3.25
3.00
(µm)
3.8
3.6
3.5
3.1
(A/W)
1.1
1.3
Shunt
resistance
Rsh
D
∗
(λp, 1200, 1)
Typ.
Min.
1/2
(cm ·H z /W ) (cm ·H z
1/2
/W )
1.5 × 10
9
2 × 10
9
7.5 × 10
9
1 × 10
10
1.5 × 10
10
2 × 10
10
3.5 × 10
11
6 × 10
11
NEP
λ=λp
Rise time Term inal
tr
capacitance
V
R
=0 V
Ct
R
L
=50
Ω
V
R
=0 V
0 to 63 % f=1 MHz
(µs)
0.1
0.1
(pF)
80
10
5
150
Type No.
P8079-01
P8079-11
P8079-21
P7163
(Ω)
10
80
200
1 × 10
5
(W/Hz
1/2
)
4.4 × 10
-11
8.9 × 10
-12
4.4 × 10
-12
1.5 × 10
-13
1
InAs photovoltaic detector
s
Current vs. voltage of TE-cooled type
1.6
1.4
1.2
ONE-STAGE
TE-COOLED
(Typ. Ta=25 ˚C,
Thermal resistance of heatsink=3
˚C/W)
P8079 series, P7163
s
Cooling characteristics of TE-cooled type
30
20
10
0
-10
-20
-30
-40
-50
TWO-STAGE
TE-COOLED TYPE
ONE-STAGE
TE-COOLED TYPE
(Typ. Ta=25 ˚C, thermal resistance of heat-sink=3 ˚C/W)
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
TWO-STAGE
TE-COOLED
ELEMENT TEMPERATURE (
˚
C)
CURRENT (A)
0
0.4
0.8
1.2
1.6
VOLTAGE (V)
KIRDB0115EB
TE-COOLED CURRENT (A)
KIRDB0181EA
s
Thermistor temperature characteristic
10
6
(Typ.)
RESISTANCE (Ω)
10
5
10
4
10
3
-40
-20
0
20
ELEMENT TEMPERATURE (
˚
C)
KIRDB0116EA
s
Measurement circuit
CHOPPER
1200 Hz
DETECTOR
BAND-PASS
FILTER
r.m.s.
METER
BLACK BODY
500 K
fo=1200 Hz
∆f=120
Hz
INCIDENT ENERGY: 2.64 µW/cm
2
KIRDC0004EA
3
InAs photovoltaic detector
s
Dimensional outlines (unit: mm)
➀
P8079-01
9.1 ± 0.3
8.1 ± 0.1
WINDOW
5.5 ± 0.1
P8079 series, P7163
➁
P8079-11/-21
15.3 ± 0.2
14 ± 0.2
4.3 ± 0.2
2.3 ± 0.2
0.4 MAX.
18 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.2
0.45
LEAD
10.2 ± 0.2
1.0 MAX.
12 MIN.
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
P8079-11 P8079-21
a
4.5 ± 0.2
6.9 ± 0.2
PHOTOSENSITIVE
SURFACE
CASE
5.1 ± 0.2
KIRDA0119EA
5.1 ± 0.2
a
10 ± 0.2
WINDOW
10 ± 0.2
KIRDA0120EA
➂
P7163
LN
2
FILL PORT 12.5
s
Spectral response
10
12
(Typ.)
51 ± 1
D* (λ,1200,1) (cm · Hz
1/2
/W)
10
11
P7163 (T= -196 ˚C)
P8079-21 (T= -30 ˚C)
32 ± 1
63.5 ± 1
28.5
PUMP-OUT
PIPE 9.5
44.5 ± 1 46 ± 1
10
10
72 ± 1
102 ± 1
95 ± 1
OUTPUT
PIN
6.5
172 ± 2
PHOTOSENSITIVE
SURFACE
10
9
P8079-11
(T= -10 ˚C)
P8079-01 (T=25 ˚C)
10
8
1.5
37 ± 1
2.0
2.5
3.0
3.5
4.0
10 ± 0.5
66.8 ± 1
10 ± 1
WAVELENGTH (µm)
KIRDB0358EA
DETECTOR (ANODE)
NC
DETECTOR (CATHODE)
KIRDA0033ED
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1027E06
Mar. 2007 DN
4
京公网安备 11010802033920号
EEWORLD
