P8079-01 datasheet, PDF - EEWORLD Datasheet

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P8079-01: DescriptionInAs photovoltaic detector; CategoryLED optoelectronic/LED photoelectric; File Size78KB，4 Pages; ManufacturerHamamatsu; Websitehttp://www.hamamatsu.com

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P8079-01 Overview

InAs photovoltaic detector

P8079-01 Parametric

Parameter Name	Attribute value
Maker	Hamamatsu
package instruction	TO-5, 3 PIN
Reach Compliance Code	unknow
Configuration	SINGLE
Number of functions	1
Maximum operating temperature	60 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	OPTOELECTRONIC DEVICE

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INFRARED DETECTOR

InAs photovoltaic detector

P8079 series, P7163

Infrared detectors with high sensitivity and high-speed response

InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm.

These detectors offer better characteristics than PbSe photoconductive detectors.

Features

Applications

Thermoelectrically cooled type: high sensitivity

and high-speed response

Metal dewar type available for low light measurement

Long-wavelength cut-off of up to 3.8 µm

Easy-to-use detector/preamp modules available

Gas analysis

Infrared radiation measurement

Infrared spectrophotometry

FTIR

Accessories (Optional)

Heatsink for one-stage TE-cooled type A3179

Heatsink for two-stage TE-cooled type A3179-01

Temperature controller

C1103-04

Infrared detector module with preamp

P4631-01 (Integrated with P8079-21)

Amplifiers for InAs photovoltaic detector C4159-05

(only for P7163)

Specifications / Absolute maximum ratings

Type No.

D im ensional

outline/

W indow

m aterial *

Package

Cooling

Active

area

(mm)

φ1

Thermistor

power

dissipation

(mW)

0.2

Absolute maximum ratings

Operating

Reverse

temperature

voltage

Topr

(V)

(°C)

0.5

-40 to +60

Storage

temperature

Tstg

(°C)

-55 to +60

P8079-01

TO-5

Non-cooled

➀

P8079-11

One-stage TE-cooled

TO-8

➁

P8079-21

Two-stage TE-cooled

P7163

Metal dewer

➂

* Window material S: sapphire glass

Electrical and optical characteristics (Typ. unless otherwise noted)

M easurem ent

Photo

Peak

Cut-off

condition

sensitivity

wavelength

E le m en t

wavelength

te m pe ra tu re

λc

λ=λp

λp

(°C)

-10

-30

-196

(µm)

3.45

3.30

3.25

3.00

(µm)

3.8

3.6

3.5

3.1

(A/W)

1.1

1.3

Shunt

resistance

Rsh

∗

(λp, 1200, 1)

Typ.

Min.

1/2

(cm ·H z /W ) (cm ·H z

1/2

/W )

1.5 × 10

2 × 10

7.5 × 10

1 × 10

1.5 × 10

2 × 10

3.5 × 10

6 × 10

NEP

λ=λp

Rise time Term inal

capacitance

=0 V

=50

Ω

=0 V

0 to 63 % f=1 MHz

(µs)

0.1

(pF)

150

Type No.

P8079-01

P8079-11

P8079-21

P7163

(Ω)

200

1 × 10

(W/Hz

1/2

)

4.4 × 10

-11

8.9 × 10

-12

4.4 × 10

-12

1.5 × 10

-13

P8079-01 Related Products

	P8079-01	P8079-11	P8079-21	P8079_07	P7163
Description	InAs photovoltaic detector	InAs photovoltaic detector	InAs photovoltaic detector	InAs photovoltaic detector	InAs photovoltaic detector
Maker	Hamamatsu	Hamamatsu	Hamamatsu	-	Hamamatsu
package instruction	TO-5, 3 PIN	TO-8, 6 PIN	TO-8, 6 PIN	-	-
Reach Compliance Code	unknow	unknow	unknow	-	unknow
Configuration	SINGLE	SINGLE WITH BUILT-IN TE-COOLER AND THERMISTOR	SINGLE WITH BUILT-IN TE-COOLER AND THERMISTOR	-	SINGLE
Number of functions	1	1	1	-	1
Maximum operating temperature	60 °C	60 °C	60 °C	-	60 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-	-40 °C
Optoelectronic device types	OPTOELECTRONIC DEVICE	OPTOELECTRONIC DEVICE	OPTOELECTRONIC DEVICE	-	OPTOELECTRONIC DEVICE

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