DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3467
2SK3467-ZK
PACKAGE
TO-220AB
TO-263(MP-25ZK)
FEATURES
•
4.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 6.0 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
•
Low gate charge
Q
G
= 55 nC TYP. (I
D
= 80 A, V
DD
= 16 V, V
GS
= 10 V)
•
Built-in gate protection diode
•
Surface mount device available
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±80
±320
1.5
76
150
−55
to +150
V
V
A
A
W
W
°C
°C
(TO-263)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14991EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
Printed in Japan
©
2001
2SK3467
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
Zero Gate voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 80 A
I
F
= 80 A, V
GS
= 0 V
I
F
= 80 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V , I
D
= 40 A
V
GS(on)
= 10 V
R
G
= 10
Ω
1.5
20
4.8
6.7
2800
1200
600
16
23
74
31
55
9
17
1.0
44
40
6.0
9.5
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
90%
V
GS
V
GS
Wave Form
I
G
= 2 mA
90%
10%
R
L
V
DD
0
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
Wave Form
0
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D14991EJ1V0DS
2SK3467
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
300
I
D
- Drain Current - A
1000
FORWARD TRANSFER CHARACTERISTICS
Pulsed
V
DS
= 10 V
I
D
- Drain Current - A
V
GS
=10 V
7.0 V
250
200
150
100
50
Pulsed
0
0
1
2
3
4.5 V
100
10
T
ch
=
−50˚C
−25˚C
25˚C
75˚C
150˚C
1
2
3
4
5
1
0.1
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
V
GS(off)
- Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
| y
fs
| - Forward Transfer Admittance - S
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
Pulsed
V
DS
= 10 V
I
D
= 1 mA
10
T
ch
= 150˚C
75˚C
25˚C
−25˚C
−50˚C
1
−10
30
70
110
150
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
Pulsed
15
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
Pulsed
16
I
D
= 80 A
40 A
16 A
12
7.0 V
10
8
V
GS
= 4.5 V
5
4
0
10 V
0
0
5
10
15
20
1
10
100
1000
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Data Sheet D14991EJ1V0DS
3
2SK3467
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
8
6
4
2
I
D
= 40 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
SD
- Diode Forward Current - A
Pulsed
V
GS
= 10 V
100
4.5 V
10
1
0V
V
GS
= 4.5 V
7.0 V
10 V
0.1
0
−50
−10
30
70
110
150
0.01
0
0.4
0.8
1.2
1.6
2.0
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1000
V
GS
= 0 V
f = 1 MHz
C
iss
1000
C
oss
C
rss
100
t
f
t
r
10
t
d(off)
t
d(on)
100
0.1
1
10
100
1
0.1
1
10
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
Ω
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
18
16
14
12
10
8
6
4
2
0
0
10
20
V
DS
30
40
50
60
4
V
GS
V
DD
= 16 V
10 V
8
I
D
= 80 A
12
V
GS
- Gate to Source Voltage - V
100
10
1
0.1
0
1
10
100
I
SD
- Diode Forward Current - A
Q
G
- Gate Charge - nC
4
Data Sheet D14991EJ1V0DS
2SK3467
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
dT - Percentage of Rated Power - %
80
P
T
- Total Power Dissipation - W
0
20
40
60
80
100 120 140
160
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120 140
160
60
40
20
0
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
PW
=1
0
µ
s
I
D
- Drain Current - A
100
d
ite V)
Lim 10
)
on
=
S(
S
R
D
V
G
I
D(DC)
(@
Po
we
r
10
Di
ss
ipa
tio
n
10
0
µ
s
30
0
µ
s
1m
s
3m
10
s
m
s
Lim
ite
d
DC
1
0.1
T
C
= 25˚C
Single Pulse
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th
(
t
)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 1.65˚C/W
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - sec
Data Sheet D14991EJ1V0DS
5
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