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2SK3483

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size154KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3483 Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3483
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3483
2SK3483-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
Low on-state resistance
R
DS(on)1
= 52 mΩ MAX. (V
GS
= 10 V, I
D
= 14 A)
R
DS(on)2
= 59 mΩ MAX. (V
GS
= 4.5 V, I
D
= 14 A)
Low C
iss
: C
iss
= 2300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0V)
Gate to Source Voltage (V
DS
= 0V)
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
100
±20
±28
±60
40
1.0
150
–55 to +150
25
62.5
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001

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2SK3483 2SK3483-Z
Description SWITCHING N-CHANNEL POWER MOSFET SWITCHING N-CHANNEL POWER MOSFET
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