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2SK3507-ZK

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size133KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3507-ZK Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3507-ZK
PACKAGE
TO-252 (MP-3ZK)
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 45 mΩ MAX. (V
GS
= 10 V, I
D
= 11 A)
Low gate charge
Q
G
= 8.5 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 22 A)
Built-in G-S protection diode
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±16
±22
±45
20
1.5
150
−55
to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001
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