2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
250
220
±25
±100
±30
25
372
20
5
2.02
135
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
<
<
<
*1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 I
F
<
D
, -di/dt=50A/µs, Vcc=BV
DSS
, Tch=150°C
=-I
*4 V
DS
<250V *5 V
GS
=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=12.5A V
GS
=10V
I
D
=12.5A
V
DS
=75V
V
GS
=0V
f=1MHz
V
DS
=25V
T
ch
=25°C
T
ch
=125°C
10
75
16
2000
220
15
20
30
60
20
44
14
16
25
1.10
0.45
1.5
1.65
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
330
30
30
45
90
30
66
21
24
Units
V
V
µA
nA
mΩ
S
pF
8
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=25A V
GS
=0V T
ch
=25°C
I
F
=25A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
62.0
Units
°C/W
°C/W
1
2SK3556-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
Typical Output Characteristics
100
200
175
ID=f(VDS):80µs Pulse test,Tch=25°C
20V
80
150
125
10V
8V
7.5V
PD [W]
ID [A]
60
7.0V
100
75
50
40
6.5V
20
25
6.0V
VGS=5.5V
0
0
25
50
75
100
125
150
0
0
2
4
6
8
10
12
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
10
ID[A]
10
1
gfs [S]
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.25
VGS=
5.5V
270
240
6.0V
6.5V
7.0V
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
0.20
210
RDS(on) [ m
Ω
]
RDS(on) [
Ω
]
7.5V
180
150
max.
0.15
8V
10V
20V
120
90
typ.
0.10
0.05
60
30
0.00
0
20
40
60
80
100
0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3556-01L,S,SJ
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
14
12
max.
Typical Gate Charge Characteristics
VGS=f(Qg):ID=25A, Tch=25°C
VGS(th) [V]
5.0
4.5
Vcc= 36V
10
96V
72V
VGS [V]
75
100
125
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
min.
8
6
4
2
0
0
10
20
30
40
50
60
Tch [
°
C]
Qg [nC]
10
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
Ciss
10
0
10
C [nF]
Coss
10
-1
IF [A]
1
0.1
0.00
Crss
10
-2
10
-1
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
10
3
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
tf
10
2
td(off)
t [ns]
tr
td(on)
10
1
10
0
10
-1
10
0
10
1
10
2
ID [A]
3
2SK3556-01L,S,SJ
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
FUJI POWER MOSFET
10
1
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
10
2
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
Avalanche current I
AV
[A]
Single Pulse
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
Outline Drawings (mm)
FUJI POWER MOS FET
Type(L)
Type(S)
FUJI POWER MOS FET
Type(SJ)
FUJI POWER MOS FET
OUT VIEW
OUT VIEW
See Note: 1.
4
See Note: 1.
Trademark
Fig. 1.
Fig. 1.
See Note: 1.
Trademark
Trademark
Lot No.
Lot No.
Type name
Lot No.
Type name
Type name
PRE-SOLDER
Fig. 1.
Fig. 1.
CONNECTION
1
4 2
3
GATE
DRAIN
SOURCE
Solder Plating
Pre-Solder
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
CONNECTION
1
4
2
3
GATE
DRAIN
SOURCE
Solder Plating
CONNECTION
Pre-Solder
Notes
1
2
3
1 GATE
2 DRAIN
3 SOURCE
Note: 1. Guaranteed mark of
avalanche ruggedness.
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
Note: 1. Guaranteed mark of
avalanche ruggedness.
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
4
京公网安备 11010802033920号
EEWORLD
