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2SK3556-01SJ

Description
N-CHANNEL SILICON POWER MOSFET
File Size128KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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2SK3556-01SJ Overview

N-CHANNEL SILICON POWER MOSFET

2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
250
220
±25
±100
±30
25
372
20
5
2.02
135
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
<
<
<
*1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 I
F
<
D
, -di/dt=50A/µs, Vcc=BV
DSS
, Tch=150°C
=-I
*4 V
DS
<250V *5 V
GS
=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=12.5A V
GS
=10V
I
D
=12.5A
V
DS
=75V
V
GS
=0V
f=1MHz
V
DS
=25V
T
ch
=25°C
T
ch
=125°C
10
75
16
2000
220
15
20
30
60
20
44
14
16
25
1.10
0.45
1.5
1.65
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
330
30
30
45
90
30
66
21
24
Units
V
V
µA
nA
mΩ
S
pF
8
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=25A V
GS
=0V T
ch
=25°C
I
F
=25A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
62.0
Units
°C/W
°C/W
1

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