DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3572
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3572 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
5
ORDERING INFORMATION
PART NUMBER
2SK3572
2SK3572-S
2SK3572-ZK
2SK3572-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
4.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 5.7 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
•
Low gate charge
Q
G
= 32 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 80 A)
•
Built-in gate protection diode
•
Surface mount device available
Note
TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±80
±300
1.5
52
150
–55 to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16258EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2002
2SK3572
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 80 A
I
F
= 80 A, V
GS
= 0 V
I
F
= 80 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V, I
D
= 40 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
15
4.4
7.4
1700
700
250
16
14
50
12
32
7.1
7.7
1.0
42
34
5.7
9.9
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS
0
10%
V
GS
90%
I
G
= 2 mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS
90%
10%
10%
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D16258EJ2V0DS
2SK3572
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
60
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Lim ited
I
D(pulse)
PW = 10
µs
I
D
- Drain Current - A
100
I
D(DC)
10
DC
Power Dissipation Lim ited
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
100
µs
1 ms
10 ms
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
Single pulse
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 2.4°C/W
1
0.1
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16258EJ2V0DS
3
2SK3572
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
Pulsed
300
V
G S
= 10 V
FORWARD TRANSFER CHARACTERISTICS
1000
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
250
200
150
100
50
0
0
1
2
3
4
5
6
4.5 V
I
D
- Drain Current - A
100
T
ch
= 150°C
75°C
25°C
−55°C
10
1
0.1
0.01
0
1
2
3
4
5
6
7
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
-50
0
50
V
DS
= 10 V
I
D
= 1 mA
10
T
ch
=
−55°C
25°C
75°C
150°C
1
0.1
0.1
1
10
100
100
150
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
25
Pulsed
20
V
GS
= 4.5 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
15
10
I
D
= 40 A
5
10
10 V
5
0
1
10
100
1000
0
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16258EJ2V0DS
2SK3572
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
12
10
V
GS
= 4.5 V
8
6
4
2
0
-50
0
50
100
150
10 V
I
D
= 40 A
Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
C
oss
C
rss
100
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
10
V
DD
16
V
GS
= 16 V
10 V
8
100
t
f
10
t
r
t
d(off)
12
6
t
d(on)
8
4
4
V
DS
0
0
10
20
I
D
= 83 A
2
1
0.1
1
10
100
0
30
40
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
V
GS
= 10 V
0V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
10
1
10
0.1
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
1
10
100
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
I
D
- Drain Current - A
Data Sheet D16258EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
Ω
V
DS
- Drain to Source Voltage - V
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