DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
2.8 ±0.2
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
3
FEATURES
•
2.5V drive available
•
Low on-state resistance
R
DS(on)1
= 50 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
R
DS(on)2
= 53 mΩ MAX. (V
GS
= 4.0 V, I
D
= 2.0 A)
R
DS(on)3
= 75 mΩ MAX. (V
GS
= 2.5 V, I
D
= 2.0 A)
1.5
0 to 0.1
1
2
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
2SK3576
PACKAGE
SC-96 (Mini Mold Thin Type)
1 : Gate
2 : Source
3 : Drain
Marking: XK
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
V
DSS
V
GSS
I
D(DC)
20
±12
±4.0
±16
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Drain
I
D(pulse)
P
T1
Note2
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
P
T2
T
ch
T
stg
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15939EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
2SK3576
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= 16 V
V
GS
= 4.0 V
I
D
= 4.0 A
I
F
= 4.0 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±12
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 2.0 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= 4.0 V, I
D
= 2.0 A
V
GS
= 2.5 V, I
D
= 2.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 10 V, I
D
= 2.0 A
V
GS
= 4.0 V
R
G
= 10
Ω
0.5
1.0
40
42
56
250
80
60
28
140
110
180
3.3
0.7
1.5
0.89
50
53
75
MIN.
TYP.
MAX.
10
±10
1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS
0
10%
V
GS
90%
I
G
= 2 mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS
90%
10%
10%
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D15939EJ1V0DS
2SK3576
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
1.5
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
80
P
T
- Total Power Dissipation - W
100
1.25
1
60
0.75
40
0.5
20
0.25
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(on)
Lim ited
(V
GS
= 4.5 V) I
D(pulse)
10
T
A
- Ambient Temperature -
°C
I
D
- Drain Current - A
I
D(DC)
PW = 1 m s
1
10 m s
0.1
Single Pulse
Mounted on FR-4 board of
50 m m × 50 m m × 1.6 m m
0.01
0.1
1
10
100
100 m s
5s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
Single Pulse
W ithout board
100
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15939EJ1V0DS
3
2SK3576
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
Pulsed
16
V
GS
= 4.5 V
4.0 V
10
1
100
V
D S
= 10 V
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
12
I
D
- Drain Current - A
0.1
0.01
0.001
0.0001
8
2.5 V
T
A
= 125°C
75°C
25°C
−25°C
4
0
0.0
0.2
0.4
0.6
0.8
1.0
0.00001
0
1
2
3
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
V
GS(off)
– Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
| y
fs
| - Forward Transfer Admittance - S
10
1
1
T
A
= 125°C
75°C
25°C
−25°C
0.1
0.5
-50
0
50
100
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATERESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
I
D
= 2.0 A
90
80
70
4.0 V
60
50
4.5 V
40
30
20
-50
0
50
100
150
V
GS
= 2.5 V
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
100
90
80
70
60
50
40
30
20
0
2
4
6
8
10
12
V
GS
- Gate to Source Voltage - V
I
D
= 2.0 A
100
T
ch
- Channel Temperature - °C
4
Data Sheet D15939EJ1V0DS
2SK3576
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS
= 2.5 V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
V
GS
= 4.0 V
Pulsed
70
60
50
25°C
40
30
20
0.01
−25°C
T
A
= 125°C
75°C
90
80
70
60
50
40
30
0.01
0.1
1
10
100
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
70
60
50
40
30
20
0.01
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
V
GS
= 0 V
f = 1 MHz
C
iss
, C
oss
, C
rss
- Capacitance - pF
T
A
= 125°C
75°C
25°C
−25°C
C
iss
100
C
oss
C
rss
10
0.1
1
10
100
0.1
1
10
100
I
D
- Drain Current - A
SWITCHING CHARACTERISTICS
1000
V
DD
= 10 V
V
GS
= 4.0 V
R
G
= 10
Ω
V
DS
- Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
r
t
f
I
SD
- Diode Forward Current - A
10
V
GS
= 0 V
1
100
t
d(off)
t
d(on)
0.1
10
0.1
1
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- Drain Current - A
V
SD
- Source to Drain Voltage - V
Data Sheet D15939EJ1V0DS
5
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