2SK3589-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON
POWER MOS FET
MOSFET
POWER
FUJI
Outline Drawings
(mm)
外½寸法図
OUT VIEW
Fig.1
Ｐ矢視図参照
MARKING
表 示 内 容
Fig.1
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Ｐ矢視図
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
Tc=25°C
Ta=25°C
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Tc=25°C
Ta=25°C
T
ch
T
stg
Ratings
100
70
±50
±6.9 **
±200
±30
50
465
20
5
123
2.4
+150
Unit
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
注）１.（ ）内寸法は参考値とする。
表示内容
商標
Special
specification
for customer
CONNECTION
11 G : : Gate
G Gate
結線図
S1 : : Source1
22 S1 Source1
33 S2 : : Source2
S2 Source2
44 D : : Drain
G
D Drain
S1
S2
D
特殊品記号
Lot No.
ロットNo.
Type name
½名
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
-55 to +150
2
** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
*1 L=223µH, Vcc=48V
*2 Tch< 150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
=
*5 V
GS
=-30V
*4 V
DS
<100V
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=25A
V
GS
=10V
R
GS
=10
Ω
V
CC
=50V
I
D
=50A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
19
25
1830
460
38
20
35
50
23
52
16
18
1.10
0.1
0.4
Min.
100
3.0
Typ.
Max.
5.0
25
250
100
25
2745
690
57
30
53
75
35
78
24
27
1.65
Units
V
V
µA
nA
mΩ
S
pF
19
ns
nC
50
A
V
µs
µC
Thermalcharacteristics
Test Conditions
R
th(ch-c)
channel to case
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
Item
Symbol
Min.
Typ.
Max.
0.93
87.0
52.0
Units
°C/W
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3589-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
200
175
5
Allowable Power Dissipation
PD=f(Tc)
Surface mounted on
1000mm ,t=1.6mm FR-4 PCB
2
2
4
150
125
3
(Drain pad area : 500mm )
PD [W]
100
75
50
25
0
0
25
50
75
100
125
150
PD [W]
2
1
0
0
25
50
75
100
125
150
Tc [
°
C]
Tc [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A
500
200
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
20V
10V
400
160
300
120
EAV [mJ]
ID [A]
8V
80
7.5V
7.0V
200
100
40
6.5V
6.0V
VGS=5.5V
0
0
25
50
75
100
125
150
0
0
2
4
6
8
10
12
starting Tch [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID[A]
10
10
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
gfs [S]
VGS[V]
1
10
100
ID [A]
2
2SK3589-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.15
VGS=
5.5V 6.0V 6.5V 7.0V
7.5V
60
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
0.12
50
RDS(on) [ m
Ω
]
RDS(on) [
Ω
]
40
0.09
8V
30
max.
0.06
10V
20
typ.
0.03
20V
0.00
0
40
80
120
160
200
10
0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
µA
VGS(th)=f(Tch):VDS=VGS,ID=250
14
12
max.
10
Typical Gate Charge Characteristics
VGS=f(Qg):ID=50A, Tch=25°C
VGS(th) [V]
4.5
VGS [V]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
Vcc= 50V
8
6
4
2
0
0
20
40
60
80
Tch [
°
C]
Qg [nC]
10
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Ciss
0
10
10
C [nF]
Coss
10
-1
IF [A]
1
2
Crss
10
-2
10
-1
10
0
10
1
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
3
2SK3589-01
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
10
3
FUJI POWER MOSFET
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
100
90
Rth(ch-a) [
°
C/W]
tf
2
80
70
60
50
40
30
20
10
10
td(off)
tr
t [ns]
td(on)
10
1
10
0
0
-1
10
10
0
10
1
10
2
0
1000
2000
3000
2
4000
5000
ID [A]
Drain Pad Area [mm ]
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
Zth(ch-c) [°C/W]
0
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
10
2
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
Single Pulse
Avalanche Current I
AV
[A]
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
4
京公网安备 11010802033920号
EEWORLD
