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2SK3589

Description
N-CHANNEL SILICON POWER MOSFET
File Size99KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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2SK3589 Overview

N-CHANNEL SILICON POWER MOSFET

2SK3589-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON
POWER MOS FET
MOSFET
POWER
FUJI
Outline Drawings
(mm)
外½寸法図
OUT VIEW
Fig.1
P矢視図参照
MARKING
表 示 内 容
Fig.1
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P矢視図
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
Tc=25°C
Ta=25°C
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Tc=25°C
Ta=25°C
T
ch
T
stg
Ratings
100
70
±50
±6.9 **
±200
±30
50
465
20
5
123
2.4
+150
Unit
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
注)1.( )内寸法は参考値とする。
表示内容
商標
Special
specification
for customer
CONNECTION
11 G : : Gate
G Gate
結線図
S1 : : Source1
22 S1 Source1
33 S2 : : Source2
S2 Source2
44 D : : Drain
G
D Drain
S1
S2
D
特殊品記号
Lot No.
ロットNo.
Type name
½名
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
-55 to +150
2
** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
*1 L=223µH, Vcc=48V
*2 Tch< 150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
=
*5 V
GS
=-30V
*4 V
DS
<100V
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=25A
V
GS
=10V
R
GS
=10
V
CC
=50V
I
D
=50A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
19
25
1830
460
38
20
35
50
23
52
16
18
1.10
0.1
0.4
Min.
100
3.0
Typ.
Max.
5.0
25
250
100
25
2745
690
57
30
53
75
35
78
24
27
1.65
Units
V
V
µA
nA
mΩ
S
pF
19
ns
nC
50
A
V
µs
µC
Thermalcharacteristics
Test Conditions
R
th(ch-c)
channel to case
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
Item
Symbol
Min.
Typ.
Max.
0.93
87.0
52.0
Units
°C/W
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1

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