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2SK360

Description
Silicon N-Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK360 Overview

Silicon N-Channel MOS FET

2SK360 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK360
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
MPAK
3
1
2
1. Gate
2. Drain
3. Source
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