DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3639
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3639-ZK
PACKAGE
TO-252 (MP-3ZK)
(TO-252)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 5.5 mΩ MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 8.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 32 A)
•
Low C
iss
: C
iss
= 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±64
±256
40
1.0
150
−55
to +150
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15967EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SK3639
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 32 A
V
GS
= 10 V, I
D
= 32 A
V
GS
= 4.5 V, I
D
= 32 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
1.5
19
39
4.4
5.8
2400
970
350
13
14
71
22
2.5
Drain to Source On-state Resistance
5.5
8.5
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 64 A
I
F
= 64 A, V
GS
= 0 V
I
F
= 64 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
45
7.6
11
0.96
40
35
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
D.U.T.
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D15967EJ3V0DS
2SK3639
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
P
T
- Total Power Dissipation - W
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
PW = 10
µs
100
µs
1 ms
10
R
DS(on)
Lim ited
(at V
G S
= 10 V)
DC
10 m s
I
D
- Drain Current - A
100
I
D(D C)
1
Power Dissipation Lim ited
0.1
T c = 25°C
Single Pulse
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 3.13°C/W
1
0.1
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15967EJ3V0DS
3
2SK3639
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
FORWARD TRANSFER CHARACTERISTICS
1000
250
I
D
- Drain Current - A
I
D
- Drain Current - A
V
GS
= 10 V
200
100
4.5 V
150
10
T
ch
=
−55°C
25°C
75°C
150°C
1
100
50
0.1
Pulsed
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
0
0
0.5
1
1.5
2
2.5
3
0.01
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
T
ch
=
−55°C
25°C
75°C
150°C
10
V
GS(off)
- Gate Cut-off Voltage - V
2 .5
2
1 .5
`
1
0 .5
0
-5 0
-2 5
0
25
50
75
V
DS
= 10 V
I
D
= 1 m A
1
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
100 125 150
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
25
20
15
10
5
0
0
5
10
15
20
I
D
= 32 A
Pulsed
15
10
V
GS
= 4.5 V
5
10 V
0
1
10
100
1000
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D15967EJ3V0DS
2SK3639
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12.5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1 0 0 00
10
V
GS
= 4.5 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
is s
1 0 00
C
os s
C
rs s
1 00
7.5
5
10 V
2.5
I
D
= 32 A
Pulsed
0
- 50 - 25
0
25
50
75
100 125 150
V
GS
= 0 V
f = 1 MHz
10
0 .0 1
0.1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
10
V
DD
= 16 V
10 V
V
DS
- Drain to Source Voltage - V
16
8
100
t
d(off)
12
V
GS
8
6
t
f
t
r
10
t
d(on)
4
4
V
DS
0
I
D
= 64 A
2
1
0.1
1
10
100
0
0
10
20
30
40
50
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
I
F
- Diode Forward Current - A
V
GS
= 10 V
100
t
rr
- Reverse Recovery Time - ns
100
10
0V
1
10
0.1
Pulsed
0.01
0
0.5
1
1.5
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D15967EJ3V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
D D
= 10 V
V
G S
= 10 V
R
G
= 10
Ω
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