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2SK3639-ZK

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size140KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3639-ZK Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3639
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3639-ZK
PACKAGE
TO-252 (MP-3ZK)
(TO-252)
FEATURES
Low on-state resistance
R
DS(on)1
= 5.5 mΩ MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 8.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 32 A)
Low C
iss
: C
iss
= 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
10
µ
s, Duty Cycle
1%
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±64
±256
40
1.0
150
−55
to +150
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15967EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002

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