DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3659
PACKAGE
Isolated TO-220
FEATURES
•4.5V
drive available.
•Low
on-state resistance,
R
DS(on)1
= 5.7 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
•Low
gate charge,
Q
G
= 32 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 65 A)
•Built-in
gate protection diode.
•Avalanche
capability ratings.
•Isolated
TO-220 package.
ABSOLUTE MAXIMUM RATING (T
A
= 25
°C
)
Drain to source voltage (V
GS
= 0 V)
Gate to source voltage (V
DS
= 0 V)
Drain current (DC) (T
C
= 25°C)
Drain current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±65
±260
2.0
25
150
−55
to +150
35
122
V
V
A
A
W
W
°C
°C
A
mJ
Total power dissipation (T
A
= 25°C)
Total power dissipation (T
C
= 25°C)
Channel temperature
Storage temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Note 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 10 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
©
2002
2SK3659
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 65 A
I
F
= 65 A, V
GS
= 0 V
I
F
= 65 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
Test Conditions
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V, I
D
= 40 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
15
4.6
7.1
1700
700
250
16
14
50
12
32
6.0
8.3
1.0
45
34
5.7
9.9
MIN.
TYP.
MAX.
10
±10
2.5
Unit
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16251EJ2V0DS
2SK3659
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
30
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
25
50
75
100
125
150
175
25
80
20
60
15
40
10
20
5
0
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
R
DS
(on)
Limited
PW = 100
µs
1 ms
10 ms
100 ms
T
C
- Case Temperature -
°C
100
I
D
- Drain Current - A
10
I
D(DC)
1
DC Power Dissipation Limited
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 62.5°C/W
10
R
th(ch-C)
= 5°C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16251EJ2V0DS
3
2SK3659
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
Pulsed
250
V
GS
= 10 V
100
1000
Pulsed
V
DS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
I
D
- Drain Current - A
200
10
T
ch
= 150°C
75°C
25°C
−55°C
150
4.5 V
100
1
50
0.1
0
0
0.5
1
1.5
2
0.01
1
2
3
4
5
6
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
100
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Pulsed
V
DS
= 10 V
V
GS(off)
– Gate Cut-off Voltage - V
2.5
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
I
D
= 1 mA
2.0
10
1.5
1.0
1
T
ch
= 150°C
75°C
25°C
−55°C
0.5
0.0
-50
0
50
100
150
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
25
Pulsed
20
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
15
10
10
V
GS
= 4.5 V
I
D
= 40 A
5
5
10 V
0
0.1
1
10
100
1000
0
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16251EJ2V0DS
2SK3659
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
14
12
10
V
GS
= 4.5 V
I
D
= 40 A
Pulsed
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
V
GS
= 10 V
f = 1 MHz
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
C
oss
C
rss
100
8
10 V
6
4
2
0
-50
0
50
100
150
10
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
SWITCHING CHARACTERISTICS
1000
20
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
V
DS
- Drain to Source Voltage - V
16
V
DD
= 16 V
10 V
8
100
t
d(off)
t
f
t
d(on)
12
V
GS
8
6
4
10
t
r
4
V
DS
I
D
= 65 A
0
0
5
10
15
20
25
30
35
2
1
0.1
1
10
100
0
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
I
SD
- Diode Forward Current - A
100
V
GS
= 10 V
0V
10
t
rr
- Reverse Recovery Time - ns
100
1
10
0.1
Pulsed
0.01
0
0.5
1
1.5
V
GS
= 0 V
di/dt = 100 A/µs
1
0.1
1
10
100
V
SD
- Source to Drain Voltage - V
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
Ω
Data Sheet D16251EJ2V0DS
5
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