DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3713
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3713 is N-channel MOS Field Effect Transistor
designed for high voltage and high speed switching
applications.
ORDERING INFORMATION
PART NUMBER
2SK3713-SK
PACKAGE
TO-262
FEATURES
•
Super high V
GS(off)
: V
GS(off)
= 3.8 to 5.8 V
•
Low C
rss
: C
rss
= 6.5 pF TYP.
•
Low Q
G
: Q
G
= 25 nC TYP.
•
Low on-state resistance:
R
DS(on)
= 0.83
Ω
MAX. (V
GS
= 10 V, I
D
= 5 A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
±30
±10
±35
100
1.5
150
−55
to +150
10
6
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 100 V, L = 100
µ
H, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16588EJ1V0DS00 (1st edition)
Date Published September 2003 NS CP(K)
Printed in Japan
2003
2SK3713
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 150 V, I
D
= 5 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
100
±100
UNIT
µ
A
nA
V
S
3.8
2.5
4.8
4.6
0.68
1460
250
6.5
26
8.5
30
5.2
5.8
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
0.83
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 450 V
V
GS
= 10 V
I
D
= 10 A
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
25
12
9
0.9
450
4.0
1.5
V
F(S-D)
t
rr
Q
rr
V
ns
µ
C
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D16588EJ1V0DS
2SK3713
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(DC)
1
I
D(pulse)
I
D
- Drain Current - A
10
0.1
PW = 100
µ
s
1 ms
10 ms
Power Dissipation Limited
Single pulse
T
C
= 25°C
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
R
th(ch-A)
= 83.3°C/W
100
10
1
R
th(ch-C)
= 1.25°C/W
0.1
0.01
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D16588EJ1V0DS
3
2SK3713
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
35
V
GS
= 10 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0.001
V
DS
= 10 V
Pulsed
T
A
= 150°C
125°C
75°C
25°C
−
25°C
I
D
- Drain Current - A
30
25
20
15
10
5
0
0
10
V
GS
= 20 V
10 V
I
D
- Drain Current - A
40
20
30
0.0001
0
5
10
15
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
6
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
T
A
=
−25°C
25°C
75°C
V
GS(off)
- Gate Cut-off Voltage - V
5.5
5
4.5
4
3.5
3
V
DS
= 10 V
I
D
= 1 mA
10
1
125°C
150°C
0.1
2.5
−25
0
25
50
75
100
125
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
2
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.8
Pulsed
1.5
V
GS
= 10 V
1
20 V
0.5
0.1
1
10
100
1.2
I
D
= 10 A
5A
2A
0.6
0
3
7
11
15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16588EJ1V0DS
2SK3713
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
I
D
= 5.0 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 10 V
Pulsed
C
iss
1000
C
oss
100
10
V
GS
= 0 V
f = 1 MHz
1
0.1
1
10
C
rss
100
1000
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
t
f
t
d(off)
t
d(on)
10
t
r
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
DD
= 450 V
300 V
150 V
I
D
= 10 A
400
300
200
100
0
12
9
6
100
V
GS
V
DS
3
0
1
0.1
1
10
100
0
4
8
12
16
20
24
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
10
V
GS
= 10 V
1
0V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
Pulsed
V
GS
= 0 V
di/dt = 100 A/
µ
s
100
0.1
0.01
0
0.5
1
1.5
10
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16588EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
500
15
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