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2SK3713-SK

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size116KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3713-SK Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3713
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3713 is N-channel MOS Field Effect Transistor
designed for high voltage and high speed switching
applications.
ORDERING INFORMATION
PART NUMBER
2SK3713-SK
PACKAGE
TO-262
FEATURES
Super high V
GS(off)
: V
GS(off)
= 3.8 to 5.8 V
Low C
rss
: C
rss
= 6.5 pF TYP.
Low Q
G
: Q
G
= 25 nC TYP.
Low on-state resistance:
R
DS(on)
= 0.83
MAX. (V
GS
= 10 V, I
D
= 5 A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
±30
±10
±35
100
1.5
150
−55
to +150
10
6
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 100 V, L = 100
µ
H, R
G
= 25
Ω,
V
GS
= 20
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16588EJ1V0DS00 (1st edition)
Date Published September 2003 NS CP(K)
Printed in Japan
2003

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Description SWITCHING N-CHANNEL POWER MOSFET SWITCHING N-CHANNEL POWER MOSFET
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